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Titolo Data di pubblicazione Autore(i) File
Explanation of the Charge Trapping Properties of Silicon Nitride Storage Layers for NVMs - Part II: Atomistic and Electrical Modeling 1-gen-2011 Vianello, Elisa; Driussi, Francesco; Blaise, P.; Palestri, Pierpaolo; Esseni, David; Perniola, L.; Molas, G.; De Salvo, B.; Selmi, Luca
Effects of Thermal Treatments on the Trapping Properties of HfO2 Films for Charge Trap Memories 1-gen-2012 Spiga, S; Driussi, Francesco; Lamperti, A; Congedo, G; Salicio, O.
On the origin of the mobility reduction in n- and p-metal-oxide-semiconductor field effect transistors with hafnium-based/metal gate stacks 1-gen-2012 Toniutti, Paolo; Palestri, Pierpaolo; Esseni, David; Driussi, Francesco; DE MICHIELIS, Marco; Selmi, Luca
Modelling, simulation and design of the vertical Graphene Base Transistor 1-gen-2013 Driussi, Francesco; Palestri, Pierpaolo; Selmi, Luca
Modeling, simulation and design of the vertical Graphene Base Transistor 1-gen-2013 Driussi, Francesco; Palestri, Pierpaolo; Selmi, Luca
Simulation Study of the Trapping Properties of HfO2-Based Charge-Trap Memory Cells 1-gen-2014 Driussi, Francesco; Sabina, Spiga; Alessio, Lamperti; Gabriele, Congedo; Gambi, Alberto
Simulation of DC and RF Performance of the Graphene Base Transistor 1-gen-2014 Venica, Stefano; Driussi, Francesco; Palestri, Pierpaolo; Esseni, David; Sam, Vaziri; Selmi, Luca
Total Ionizing Dose Effects in Si-Based Tunnel FETs 1-gen-2014 Lili, Ding; Elena, Gnani; Simone, Gerardin; Marta, Bagatin; Driussi, Francesco; Palestri, Pierpaolo; Selmi, Luca; Cyrille Le, Royer; Alessandro, Paccagnella
Graphene Base Transistors with optimized emitter and dielectrics 1-gen-2014 Venica, S.; Driussi, Francesco; Palestri, Pierpaolo; Selmi, Luca
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 1-gen-2015 Venica, Stefano; Driussi, Francesco; Palestri, Pierpaolo; Selmi, Luca
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 1-gen-2015 Venica, Stefano; Driussi, Francesco; Palestri, Pierpaolo; Selmi, Luca
Effects of electrical stress and ionizing radiation on Si-based TFETs 1-gen-2015 Ding, Lili; Gerardin, Simone; Paccagnella, Alessandro; Gnani, Elena; Bagatin, Marta; Driussi, Francesco; Selmi, Luca; Le Royer, Cyrille
Going ballistic: Graphene hot electron transistors 1-gen-2015 Vaziri, S.; Smith, A. D.; Östling, M.; Lupina, G.; Dabrowski, J.; Lippert, G.; Mehr, W.; Driussi, Francesco; Venica, Stefano; Di Lecce, V.; Gnudi, A.; König, M.; Ruhl, G.; Belete, M.; Lemme, M. C.
Electrical Compact Modeling of Graphene Base Transistors 1-gen-2015 Frégonèse, Sébastien; Venica, Stefano; Driussi, Francesco; Zimmer, Thomas
Investigation of Hot Carrier Stress and Constant Voltage Stress in High-κ Si-Based TFETs 1-gen-2015 Ding, L.; Gnani, E.; Gerardin, S.; Bagatin, M.; Driussi, Francesco; Palestri, Pierpaolo; Selmi, Luca; Royer, C. Le; Paccagnella, A.
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 1-gen-2015 Palestri, Pierpaolo; Caruso, Enrico; Driussi, Francesco; Esseni, David; Lizzit, Daniel; Osgnach, Patrik; Venica, Stefano; Selmi, Luca
Modeling electrostatic doping and series resistance in graphene-FETs 1-gen-2016 Venica, Stefano; Zanato, Massimiliano; Driussi, Francesco; Palestri, Pierpaolo; Selmi, Luca
Impact of bias conditions on electrical stress and ionizing radiation effects in Si-based TFETs 1-gen-2016 Ding, Lili; Gnani, Elena; Gerardin, Simone; Bagatin, Marta; Driussi, Francesco; Selmi, Luca; Royer, Cyrille Le; Paccagnella, Alessandro
Simulation Study of the Graphene Base Transistor 1-gen-2017 Venica, Stefano; Driussi, Francesco; Palestri, Pierpaolo; Selmi, Luca
Detailed characterization and critical discussion of series resistance in graphene-metal contacts 1-gen-2017 Venica, Stefano; Driussi, Francesco; Gahoi, Amit; Passi, Vikram; Palestri, Pierpaolo; Lemme, Max C.; Selmi, Luca
Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects 1-gen-2017 Badami, O.; Driussi, F.; Palestri, P.; Selmi, L.; Esseni, D.
Graphene base transistors with bilayer tunnel barriers: Performance evaluation and design guidelines 1-gen-2017 Venica, Stefano; Driussi, Francesco; Vaziri, Sam; Palestri, Pierpaolo; Selmi, Luca
Influence of δ p-doping on the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation 1-gen-2017 Steinhartova, T.; Nichetti, C.; Antonelli, M.; Cautero, G.; Menk, R. H.; Pilotto, A.; Driussi, F.; Palestri, P.; Selmi, L.; Koshmak, K.; Nannarone, S.; Arfelli, F.; Zilio, S. Dal; Biasiol, G.
Sub-1 nm Equivalent Oxide Thickness Al-HfO2 Trapping Layer with Excellent Thermal Stability and Retention for Nonvolatile Memory 1-gen-2018 Spiga, Sabina; Driussi, Francesco; Congedo, Gabriele; Wiemer, Claudia; Lamperti, Alessio; Cianci, Elena
On the Adequacy of the Transmission Line Model to Describe the Graphene-Metal Contact Resistance 1-gen-2018 Venica, Stefano; Driussi, Francesco; Gahoi, Amit; Palestri, Pierpaolo; Lemme, Max C.; Selmi, Luca
An Improved Nonlocal History-Dependent Model for Gain and Noise in Avalanche Photodiodes Based on Energy Balance Equation 1-gen-2018 Nichetti, C.; Pilotto, A.; Palestri, P.; Selmi, L.; Antonelli, M.; Arfelli, F.; Biasiol, G.; Cautero, G.; Driussi, F.; Klein, N. Y.; Menk, R. H.; Steinhartova, T.
An Improved Random Path Length Algorithm for p-i-n and Staircase Avalanche Photodiodes 1-gen-2018 Pilotto, Alessandro; Palestri, Pierpaolo; Selmi, Luca; Antonelli, Matias; Arfelli, Fulvia; Biasiol, Giorgio; Cautero, Giuseppe; Driussi, Francesco; Menk, Ralf H.; Nichetti, Camilla; Steinhartova, Tereza
Reliability analysis of the metal-graphene contact resistance extracted by the transfer length method 1-gen-2018 Venica, Stefano; Driussi, Francesco; Gahoi, Amit; Kataria, Satender; Palestri, Pierpaolo; Lenirne, Max C.; Selmi, Luca
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits 1-gen-2018 Esseni, D.; Badami, Oves Mohamed Hussein; Driussi, F.; Lizzit, D.; Pala, M.; Palestri, P.; Rollo, T.; Selmi, L.; Venica, S.
Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating 1-gen-2018 Badami, O.; Lizzit, D.; Driussi, F.; Palestri, P.; Esseni, D.
Improved understanding of metal–graphene contacts 1-gen-2019 Driussi, F.; Venica, S.; Gahoi, A.; Gambi, A.; Giannozzi, P.; Kataria, S.; Lemme, M. C.; Palestri, P.; Esseni, D.
Semi-classical modeling of nanoscale nMOSFETs with III-V channel 1-gen-2019 Palestri, Pierpaolo; Caruso, Enrico; Badami, Oves; Driussi, Francesco; Esseni, David; Selmi, Luca
Investigation of the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation 1-gen-2019 Nichetti, Camilla; Steinhartova, Tereza; Antonelli, Matias; Cautero, Giuseppe; Menk, Ralf Hendrik; Pilotto, Alessandro; Driussi, Francesco; Palestri, Pierpaolo; Selmi, Luca; Arfelli, Fulvia; Biasiol, Giorgio
A New Expression for the Gain-Noise Relation of Single-Carrier Avalanche Photodiodes With Arbitrary Staircase Multiplication Regions 1-gen-2019 Pilotto, A.; Palestri, P.; Selmi, L.; Antonelli, M.; Arfelli, F.; Biasiol, G.; Cautero, G.; Driussi, F.; Menk, R. H.; Nichetti, C.; Steinhartova, T.
Gain and noise in GaAs/AlGaAs avalanche photodiodes with thin multiplication regions 1-gen-2019 Nichetti, Camilla; Steinhartova, T.; Antonelli, M.; Cautero, G.; Menk, R. H.; Pilotto, Alessandro; Driussi, F.; Palestri, P.; Selmi, L.; Arfelli, F.; Biasiol, G.
Optimizing the Number of Steps and the Noise in Staircase APDs with Ternary III - V Semiconductor Alloys 1-gen-2019 Pilotto, A.; Nichetti, C.; Palestri, P.; Selmi, L.; Antonelli, M.; Arfelli, F.; Biasiol, G.; Cautero, G.; Driussi, F.; Esseni, D.; Menk, R. H.; Steinhartova, T.
DFT study of graphene doping due to metal contacts 1-gen-2019 Khakbaz, Pedram; Driussi, F.; Gambi, A.; Giannozzi, P.; Venica, S.; Esseni, D.; Gaho, A.; Kataria, S.; Lemme, M. C.
Experimental and simulation analysis of carrier lifetimes in GaAs/AlGaAs Avalanche Photo-Diodes 1-gen-2020 Driussi, F.; Pilotto, A.; De Belli, D.; Antonelli, M.; Arfelli, F.; Biasiol, G.; Cautero, G.; Menk, R. H.; Nichetti, C.; Selmi, L.; Steinhartova, T.; Palestri, P.
Dependable Contact Related Parameter Extraction in Graphene–Metal Junctions 1-gen-2020 Gahoi, A.; Kataria, S.; Driussi, F.; Venica, S.; Pandey, H.; Esseni, D.; Selmi, L.; Lemme, M. C.
Dependability Assessment of Transfer Length Method to Extract the Metal–Graphene Contact Resistance 1-gen-2020 Driussi, Francesco; Venica, Stefano; Gahoi, Amit; Kataria, Satender; Lemme, Max C.; Palestri, Pierpaolo
Effects of p doping on GaAs/AlGaAs SAM-APDs for X-rays detection 1-gen-2020 Nichetti, C.; Steinhartova, T.; Antonelli, M.; Biasiol, G.; Cautero, G.; Angelis, D. De; Pilotto, A.; Driussi, F.; Palestri, P.; Selmi, L.; Arfelli, F.; Danailov, M.; Menk, R. H.
Optimization of GaAs/AlGaAs staircase avalanche photodiodes accounting for both electron and hole impact ionization 1-gen-2020 Pilotto, A.; Nichetti, C.; Palestri, P.; Selmi, L.; Antonelli, M.; Arfelli, F.; Biasiol, G.; Cautero, G.; Driussi, F.; Esseni, D.; Menk, R. H.; Steinhartova, T.
Full-Band Monte Carlo simulations of GaAs p-i-n Avalanche PhotoDiodes: What Are the Limits of Nonlocal Impact Ionization Models? 1-gen-2020 Pilotto, A.; Driussi, F.; Esseni, D.; Selmi, L.; Antonelli, M.; Arfelli, F.; Biasiol, G.; Carrato, S.; Cautero, G.; De Angelis, D.; Menk, R. H.; Nichetti, C.; Steinhartova, T.; Palestri, P.
A model for the jitter of avalanche photodiodes with separate absorption and multiplication regions 1-gen-2020 Rosset, F.; Pilotto, A.; Selmi, L.; Antonelli, M.; Arfelli, F.; Biasiol, G.; Cautero, G.; De Angelis, D.; Driussi, F.; Menk, R. H.; Nichetti, C.; Steinhartova, T.; Palestri, P.
Simulation study of Fermi level depinning in metal-MoS2 contacts 1-gen-2021 Khakbaz, P.; Driussi, F.; Giannozzi, P.; Gambi, A.; Esseni, D.
Polarization switching and interface charges in BEOL compatible Ferroelectric Tunnel Junctions 1-gen-2021 Fontanini, R.; Barbot, J.; Segatto, M.; Lancaster, S.; Duong, Q.; Driussi, F.; Grenouillet, L.; Triozon, F.; Coignus, J.; Mikolajick, T.; Slesazeck, S.; Esseni, D.
Ferroelectric based FETs and synaptic devices for highly energy efficient computational technologies 1-gen-2021 Esseni, D.; Fontanini, R.; Lizzit, D.; Massarotto, M.; Driussi, F.; Loghi, M.
Modelling and design of FTJs as multi-level low energy memristors for neuromorphic computing 1-gen-2021 Fontanini, Riccardo; Segatto, Mattia; Massarotto, Marco; Specogna, Ruben; Driussi, Francesco; Loghi, Mirko; Esseni, David
Modelling and design of FTJs as high reading-impedance synaptic devices 1-gen-2021 Fontanini, R.; Massarotto, M.; Specogna, R.; Driussi, F.; Loghi, M.; Esseni, D.
Interplay between charge trapping and polarization switching in BEOL-compatible bilayer Ferroelectric Tunnel Junctions 1-gen-2022 Fontanini, R.; Barbot, J.; Segatto, M.; Lancaster, S.; Duong, Q.; Driussi, F.; Grenouillet, L.; Triozon, L.; Coignus, J.; Mikolajick, T.; Slesazeck, S.; Esseni, D.
Mostrati risultati da 51 a 100 di 119
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