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Mostrati risultati da 1 a 50 di 59
Titolo Data di pubblicazione Autore(i) File
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 1-gen-2012 Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Conzatti, Francesco; Selmi, Luca
Performance of III-V nanoscale MOSFETs: a simulation study 1-gen-2013 Lizzit, Daniel; Osgnach, P; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
Toward computationally efficient Multi-Subband Monte Carlo simulations of nanoscale MOSFETs 1-gen-2013 Osgnach, Patrik; Revelant, Alberto; Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Selmi, Luca
Surface roughness limited mobility modeling in ultra-thin SOI and quantum well III-V MOSFETs 1-gen-2013 Lizzit, Daniel; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel 1-gen-2013 Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Revelant, Alberto; Selmi, Luca
On the Optimization of SiGe and III-V Compound Hetero-Junction Tunnel FET Devices 1-gen-2013 Revelant, Alberto; Palestri, Pierpaolo; Osgnach, Patrik; Lizzit, Daniel; Selmi, Luca
A new formulation for surface roughness limited mobility in bulk and ultra-thin-body metal–oxide–semiconductor transistors 1-gen-2014 Lizzit, Daniel; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
The impact of interface states on the mobility and the drive current of III-V MOSFETs 1-gen-2014 Osgnach, Patrik; Caruso, Enrico; Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Selmi, Luca
Performance Benchmarking and Effective Channel Length for Nanoscale InAs, In0.53Ga0.47As, and sSi n-MOSFETs 1-gen-2014 Lizzit, Daniel; Esseni, David; Palestri, Pierpaolo; Osgnach, Patrik; Selmi, Luca
Simulation analysis of III-V n-MOSFETs: channel materials, Fermi level pinning and biaxial strain 1-gen-2015 Caruso, Enrico; Lizzit, Daniel; Osgnach, Patrik; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
Low-voltage high-performance III-V semiconductor MOSFETs for advanced CMOS nodes: impact of strain and interface traps 1-gen-2015 Osgnach, Patrik; Caruso, Enrico; Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Selmi, Luca
The impact of interface states on the mobility and drive current of In 0.53Ga 0.47As semiconductor n-MOSFETs 1-gen-2015 Osgnach, Patrik; Caruso, Enrico; Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Selmi, Luca
Improved surface roughness modeling and mobility projections in thin film MOSFETs 1-gen-2015 Badami, Oves Mohamed Hussein; Caruso, Enrico; Lizzit, Daniel; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 1-gen-2015 Palestri, Pierpaolo; Caruso, Enrico; Driussi, Francesco; Esseni, David; Lizzit, Daniel; Osgnach, Patrik; Venica, Stefano; Selmi, Luca
Quasi-Ballistic Gamma - and L-Valleys Transport in Ultrathin Body Strained (111) GaAs nMOSFETs 1-gen-2016 Caruso, Enrico; Palestri, Pierpaolo; Lizzit, Daniel; Osgnach, Patrik; Esseni, David; Selmi, Luca
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs 1-gen-2016 Badami, Oves Mohamed Hussein; Caruso, Enrico; Lizzit, Daniel; Osgnach, Patrik; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
Advanced models for simulation of planar and gate-all-around nanoscale MOSFETs 8-apr-2016 Lizzit, Daniel
Surface roughness limited mobility in multi-gate FETs with arbitrary cross-section 1-gen-2017 Badami, Oves Mohamed Hussein; Lizzit, D.; Specogna, Ruben; Esseni, David
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 1-gen-2017 Rau, M.; Caruso, Enrico; Lizzit, D.; Palestri, Pierpaolo; Esseni, David; Schenk, A.; Selmi, Luca; Luisier, M.
Improved surface-roughness scattering and mobility models for multi-gate FETs with arbitrary cross-section and biasing scheme 1-gen-2017 Lizzit, D.; Badami, O.; Specogna, Ruben; Esseni, David
Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating 1-gen-2018 Badami, O.; Lizzit, D.; Driussi, F.; Palestri, P.; Esseni, D.
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits 1-gen-2018 Esseni, D.; Badami, Oves Mohamed Hussein; Driussi, F.; Lizzit, D.; Pala, M.; Palestri, P.; Rollo, T.; Selmi, L.; Venica, S.
Photoemission investigation of oxygen intercalated epitaxial graphene on Ru(0001) 1-gen-2018 Ulstrup, S.; Lacovig, P.; Orlando, F.; Lizzit, D.; Bignardi, L.; Dalmiglio, M.; Bianchi, M.; Mazzola, F.; Baraldi, A.; Larciprete, R.; Hofmann, P.; Lizzit, S.
Spin Structure of K Valleys in Single-Layer WS2 on Au(111) 1-gen-2018 Eickholt, P.; Sanders, C.; Dendzik, M.; Bignardi, L.; Lizzit, D.; Lizzit, S.; Bruix, A.; Hofmann, P.; Donath, M.
Epitaxial growth of single-orientation high-quality MoS2 monolayers 1-gen-2018 Bana, H.; Travaglia, E.; Bignardi, L.; Lacovig, P.; Sanders, C. E.; Dendzik, M.; Michiardi, M.; Bianchi, M.; Lizzit, D.; Presel, F.; De Angelis, D.; Apostol, N.; Das, P. K.; Fujii, J.; Vobornik, I.; Larciprete, R.; Baraldi, A.; Hofmann, P.; Lizzit, S.
Novel single-layer vanadium sulphide phases 1-gen-2018 Arnold, F.; Stan, R. -M.; Mahatha, S. K.; Lund, H. E.; Curcio, D.; Dendzik, M.; Bana, H.; Travaglia, E.; Bignardi, L.; Lacovig, P.; Lizzit, D.; Li, Z.; Bianchi, M.; Miwa, J. A.; Bremholm, M.; Lizzit, S.; Hofmann, P.; Sanders, C. E.
Momentum-resolved linear dichroism in bilayer MoS2 1-gen-2019 Volckaert, K.; Rostami, H.; Biswas, D.; Markovic, I.; Andreatta, F.; Sanders, C. E.; Majchrzak, P.; Cacho, C.; Chapman, R. T.; Wyatt, A.; Springate, E.; Lizzit, D.; Bignardi, L.; Lizzit, S.; Mahatha, S. K.; Bianchi, M.; Lanata, N.; King, P. D. C.; Miwa, J. A.; Balatsky, A. V.; Hofmann, P.; Ulstrup, So.
Layer and orbital interference effects in photoemission from transition metal dichalcogenides 1-gen-2019 Rostami, H.; Volckaert, K.; Lanata, N.; Mahatha, S. K.; Sanders, C. E.; Bianchi, M.; Lizzit, D.; Bignardi, L.; Lizzit, S.; Miwa, J. A.; Balatsky, A. V.; Hofmann, P.; Ulstrup, So.
80% Valley Polarization of Free Carriers in Singly Oriented Single-Layer WS2 on Au(111) 1-gen-2019 Beyer, H.; Rohde, G.; Grubisic Cabo, A.; Stange, A.; Jacobsen, T.; Bignardi, L.; Lizzit, D.; Lacovig, P.; Sanders, C. E.; Lizzit, S.; Rossnagel, K.; Hofmann, P.; Bauer, M.
Dual-Route Hydrogenation of the Graphene/Ni Interface 1-gen-2019 Lizzit, D.; Trioni, M. I.; Bignardi, L.; Lacovig, P.; Lizzit, S.; Martinazzo, R.; Larciprete, R.
Electron–phonon coupling in single-layer MoS2 1-gen-2019 Mahatha, S. K.; Ngankeu, A. S.; Hinsche, N. F.; Mertig, I.; Guilloy, K.; Matzen, P. L.; Bianchi, M.; Sanders, C. E.; Miwa, J. A.; Bana, H.; Travaglia, E.; Lacovig, P.; Bignardi, L.; Lizzit, D.; Larciprete, R.; Baraldi, A.; Lizzit, S.; Hofmann, P.
Growth and structure of singly oriented single-layer tungsten disulfide on Au(111) 1-gen-2019 Bignardi, L.; Lizzit, D.; Bana, H.; Travaglia, E.; Lacovig, P.; Sanders, C. E.; Dendzik, M.; Michiardi, M.; Bianchi, M.; Ewert, M.; Buss, L.; Falta, J.; Flege, J. I.; Baraldi, A.; Larciprete, R.; Hofmann, P.; Lizzit, S.
CO adsorption, reduction and oxidation on Pb(Zr,Ti)O3(001) surfaces associated with negatively charged gold nanoparticles 1-gen-2020 Apostol, N. G.; Huanu, M. A.; Lizzit, D.; Hristea, I. A.; Chirila, C. F.; Trupina, L.; Teodorescu, C. M.
Growth Mechanism and Thermal Stability of a MoS2-Graphene Interface: A High-Resolution Core-Level Photoelectron Spectroscopy Study 1-gen-2020 Loi, F.; Sbuelz, L.; Lacovig, P.; Lizzit, D.; Bignardi, L.; Lizzit, S.; Baraldi, A.
Strong ferromagnetic coupling and tunable easy magnetization directions of FexCo1−x layer(s) intercalated under graphene 1-gen-2020 Avvisati, G.; Gargiani, P.; Lizzit, D.; Valvidares, M.; Lacovig, P.; Petrillo, C.; Sacchetti, F.; Betti, M. G.
Compositional Phase Change of Early Transition Metal Diselenide (VSe2 and TiSe2) Ultrathin Films by Postgrowth Annealing 1-gen-2020 Bonilla, M.; Kolekar, S.; Li, J.; Xin, Y.; Coelho, P. M.; Lasek, K.; Zberecki, K.; Lizzit, D.; Tosi, E.; Lacovig, P.; Lizzit, S.; Batzill, M.
Resistance hysteresis correlated with synchrotron radiation surface studies in atomic sp2 layers of carbon synthesized on ferroelectric (001) lead zirconate titanate in an ultrahigh vacuum 1-gen-2020 Apostol, N. G.; Lizzit, D.; Lungu, G. A.; Lacovig, P.; Chirila, C. F.; Pintilie, L.; Lizzit, S.; Teodorescu, C. M.
Interfacial two-dimensional oxide enhances photocatalytic activity of graphene/titania via electronic structure modification 1-gen-2020 De Angelis, D.; Presel, F.; Jabeen, N.; Bignardi, L.; Lizzit, D.; Lacovig, P.; Lizzit, S.; Montini, T.; Fornasiero, P.; Alfe, D.; Baraldi, A.
Ion Implantation as an Approach for Structural Modifications and Functionalization of Ti3C2TxMXenes 1-gen-2021 Pazniak, H.; Benchakar, M.; Bilyk, T.; Liedl, A.; Busby, Y.; Noel, C.; Chartier, P.; Hurand, S.; Marteau, M.; Houssiau, L.; Larciprete, R.; Lacovig, P.; Lizzit, D.; Tosi, E.; Lizzit, S.; Pacaud, J.; Celerier, S.; Mauchamp, V.; David, M. -L.
Ultrafast electronic linewidth broadening in the C 1s core level of graphene 1-gen-2021 Curcio, D; Pakdel, S; Volckaert, K; Miwa, Ja; Ulstrup, S; Lanata, N; Bianchi, M; Kutnyakhov, D; Pressacco, F; Brenner, G; Dziarzhytski, S; Redlin, H; Agustsson, Sy; Medjanik, K; Vasilyev, D; Elmers, Hj; Schonhense, G; Tusche, C; Chen, Yj; Speck, F; Seyller, T; Buhlmann, K; Gort, R; Diekmann, F; Rossnagel, K; Acremann, Y; Demsar, J; Wurth, W; Lizzit, D; Bignardi, L; Lacovig, P; Lizzit, S; Sanders, Ce; Hofmann, P
Spectroscopic view of ultrafast charge carrier dynamics in single- and bilayer transition metal dichalcogenide semiconductors 1-gen-2021 Majchrzak, P.; Volckaert, K.; Cabo, A. G.; Biswas, D.; Bianchi, M.; Mahatha, S. K.; Dendzik, M.; Andreatta, F.; Gronborg, S. S.; Markovic, I.; Riley, J. M.; Johannsen, J. C.; Lizzit, D.; Bignardi, L.; Lizzit, S.; Cacho, C.; Alexander, O.; Matselyukh, D.; Wyatt, A. S.; Chapman, R. T.; Springate, E.; Lauritsen, J. V.; King, P. D. C.; Sanders, C. E.; Miwa, J. A.; Hofmann, P.; Ulstrup, S.
Ferroelectric based FETs and synaptic devices for highly energy efficient computational technologies 1-gen-2021 Esseni, D.; Fontanini, R.; Lizzit, D.; Massarotto, M.; Driussi, F.; Loghi, M.
Modeling Nanoscale III–V Channel MOSFETs with the Self-Consistent Multi-Valley/Multi-Subband Monte Carlo Approach 1-gen-2021 Caruso, Enrico; Esseni, David; Gnani, Elena; Lizzit, Daniel; Palestri, Pierpaolo; Pin, Alessandro; Puglisi, Francesco Maria; Selmi, Luca; Zagni, Nicolò
Anisotropic strain in epitaxial single-layer molybdenum disulfide on Ag(110) 1-gen-2021 Bignardi, L.; Mahatha, S. K.; Lizzit, D.; Bana, H.; Travaglia, E.; Lacovig, P.; Sanders, C.; Baraldi, A.; Hofmann, P.; Lizzit, S.
Operation and Design of Ferroelectric FETs for a BEOL Compatible Device Implementation 1-gen-2021 Lizzit, D.; Esseni, D.
Mixed Cation Halide Perovskite under Environmental and Physical Stress 1-gen-2021 Larciprete, Rosanna; Agresti, Antonio; Pescetelli, Sara; Pazniak, Hanna; Liedl, Andrea; Lacovig, Paolo; Lizzit, Daniel; Tosi, Ezequiel; Lizzit, Silvano; Di Carlo, Aldo
Editorial: Letters from the 8th Joint International EUROSOI workshop and International Conference on Ultimate Integration on Silicon 1-gen-2022 Driussi, F.; Esseni, D.; Lizzit, D.; Palestri, P.
The effect of structural disorder on the hydrogen loading into the graphene/nickel interface 1-gen-2022 Petrone, G; Zarotti, F; Lacovig, P; Lizzit, D; Tosi, E; Felici, R; Lizzit, S; Larciprete, R
Limitations to Electrical Probing of Spontaneous Polarization in Ferroelectric-Dielectric Heterostructures 1-gen-2022 Segatto, M.; Fontanini, R.; Driussi, F.; Lizzit, D.; Esseni, D.
Engineering of metal-MoS2 contacts to overcome Fermi level pinning 1-gen-2022 Khakbaz, P.; Driussi, F.; Giannozzi, P.; Gambi, A.; Lizzit, D.; Esseni, D.
Mostrati risultati da 1 a 50 di 59
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