IRIS
SELMI, Luca
 Distribuzione geografica
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Continente #
NA - Nord America 36.543
AS - Asia 11.194
EU - Europa 8.341
SA - Sud America 2.271
Continente sconosciuto - Info sul continente non disponibili 438
AF - Africa 281
OC - Oceania 10
AN - Antartide 1
Totale 59.079
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Nazione #
US - Stati Uniti d'America 35.988
SG - Singapore 5.395
CN - Cina 2.293
UA - Ucraina 2.243
BR - Brasile 1.760
DE - Germania 1.368
IT - Italia 1.308
HK - Hong Kong 1.068
VN - Vietnam 877
FI - Finlandia 769
RU - Federazione Russa 637
FR - Francia 487
IE - Irlanda 404
SE - Svezia 316
TR - Turchia 315
CA - Canada 314
IN - India 283
GB - Regno Unito 282
AR - Argentina 172
BD - Bangladesh 163
KR - Corea 117
IQ - Iraq 99
MX - Messico 94
EC - Ecuador 85
CO - Colombia 83
ZA - Sudafrica 79
JP - Giappone 77
AT - Austria 75
PL - Polonia 75
ID - Indonesia 69
NL - Olanda 60
PK - Pakistan 58
ES - Italia 56
VE - Venezuela 55
MA - Marocco 50
PH - Filippine 44
BE - Belgio 40
CZ - Repubblica Ceca 39
SA - Arabia Saudita 36
CH - Svizzera 35
PY - Paraguay 33
CL - Cile 32
KE - Kenya 30
UZ - Uzbekistan 29
JO - Giordania 28
MY - Malesia 27
LT - Lituania 26
TN - Tunisia 26
CR - Costa Rica 25
TW - Taiwan 23
AZ - Azerbaigian 22
GR - Grecia 20
AE - Emirati Arabi Uniti 19
DZ - Algeria 19
JM - Giamaica 19
IL - Israele 18
BO - Bolivia 17
EG - Egitto 16
PE - Perù 16
EU - Europa 15
RO - Romania 15
OM - Oman 14
TH - Thailandia 14
UY - Uruguay 14
DO - Repubblica Dominicana 13
NP - Nepal 13
HN - Honduras 12
TT - Trinidad e Tobago 12
AM - Armenia 11
ET - Etiopia 11
GE - Georgia 11
SV - El Salvador 11
GT - Guatemala 10
PS - Palestinian Territory 10
IR - Iran 9
RS - Serbia 9
BG - Bulgaria 8
EE - Estonia 8
KG - Kirghizistan 8
KZ - Kazakistan 8
PA - Panama 8
TG - Togo 8
AL - Albania 7
NO - Norvegia 7
AU - Australia 6
BB - Barbados 6
CI - Costa d'Avorio 6
LA - Repubblica Popolare Democratica del Laos 6
LB - Libano 6
MD - Moldavia 6
PR - Porto Rico 6
BH - Bahrain 5
HU - Ungheria 5
LV - Lettonia 5
NI - Nicaragua 5
PT - Portogallo 5
XK - ???statistics.table.value.countryCode.XK??? 5
CG - Congo 4
CY - Cipro 4
LU - Lussemburgo 4
Totale 58.563
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Città #
Woodbridge 4.284
Fairfield 3.704
Ann Arbor 2.740
Ashburn 2.725
Houston 2.633
Singapore 2.020
Seattle 1.575
Jacksonville 1.508
Chandler 1.465
Wilmington 1.432
Cambridge 1.287
San Jose 1.235
Beijing 1.143
Hong Kong 1.056
Dearborn 904
Boardman 522
Udine 435
Council Bluffs 412
Dublin 397
Princeton 395
Lauterbourg 355
Los Angeles 352
Ho Chi Minh City 274
Izmir 245
New York 245
Santa Clara 212
Dallas 205
Hanoi 191
San Diego 191
Buffalo 179
Hefei 171
São Paulo 161
The Dalles 161
Milan 152
Munich 135
Ottawa 129
Des Moines 102
Seoul 101
Redondo Beach 100
Ogden 91
Grafing 71
Helsinki 67
Norwalk 67
Atlanta 65
Tokyo 64
Chicago 62
Nanjing 61
Kunming 60
Phoenix 60
Düsseldorf 54
Orem 54
Warsaw 53
Denver 50
Vienna 50
Chennai 49
Montreal 48
Mumbai 46
Rio de Janeiro 46
Brooklyn 44
Frankfurt am Main 44
San Mateo 44
Miano 42
Brasília 40
Baghdad 37
Belo Horizonte 37
Johannesburg 37
Brussels 36
Da Nang 36
San Francisco 36
Guangzhou 35
Amsterdam 34
Brno 34
Haiphong 34
Rome 34
Mexico City 33
Modena 32
Poplar 32
Quito 32
London 31
Simi Valley 31
Nairobi 29
Stockholm 29
Toronto 29
Trieste 29
Boston 28
Dhaka 28
Shanghai 26
Zurich 25
Amman 24
Jinan 24
Nuremberg 24
Tashkent 24
Manchester 23
North Bergen 23
Dong Ket 22
Philadelphia 22
Cervignano Del Friuli 21
Guayaquil 21
New Delhi 21
Newark 21
Totale 37.939
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Nome #
Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells 1.677
A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces 291
ENBIOS-2D Lab 287
A CMOS Pixelated Nanocapacitor Biosensor Platform for High-Frequency Impedance Spectroscopy and Imaging 259
ENBIOS-1D Lab 251
Improved surface roughness modeling and mobility projections in thin film MOSFETs 245
A better understanding of the low-field mobility in Graphene Nano-ribbons 239
An Improved Nonlocal History-Dependent Model for Gain and Noise in Avalanche Photodiodes Based on Energy Balance Equation 237
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 225
A New Expression for the Gain-Noise Relation of Single-Carrier Avalanche Photodiodes With Arbitrary Staircase Multiplication Regions 224
Cathode Hot Electrons and Anode Hot Holes in Tunneling MOS Capacitors 221
Modeling charge collection in x-ray imagers 221
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 220
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits 220
A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors 218
Efficient Statistical Simulation of Intersymbol Interference and Jitter in High-Speed Serial Interfaces 217
Analysis of Dielectric Microbead Detection by Impedance Spectroscopy with Nanoribbons 216
Characterization and modelling of differential sensitivity of nanoribbon-based pH-sensors 213
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 212
An Experimental Study of Low Field Electron Mobility in Double-Gate, Ultra-Thin SOI MOSFETs 209
Real-time imaging of microparticles and living cells with CMOS nanocapacitor arrays 209
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 208
Derivation and Numerical Verification of a Compact Analytical Model for the AC Admittance Response of Nanoelectrodes, Suitable for the Analysis and Optimization of Impedance Biosensors 208
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 207
Effects of the interaction of neighboring structures on the Latch-up behavior of C-MOS ICs 203
3D-FBK pixelsensors:Recent beam tests results with irradiated devices 202
Trade-offs between tunneling and Hot-Carrier Injection in short channel Floating Gate MOSFETs 201
A design methodology for MOS Current-Mode Logic Frequency Dividers 201
Influence of δ p-doping on the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation 201
Total Ionizing Dose Effects in Si-Based Tunnel FETs 201
High-Frequency Nanocapacitor Arrays: Concept, Recent Developments, and Outlook 200
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 200
Monte Carlo Simulation of Substrate Enhanced Electron Injection in Split-gate Memory Cells 198
Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint 197
Simulation analysis of III-V n-MOSFETs: channel materials, Fermi level pinning and biaxial strain 197
Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel 196
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs 196
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits 196
Semi-analytic Modeling for Hot Carriers in Electron Devices 195
Models for the use of commercial TCAD in the analysis of silicon-based integrated biosensors 194
Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits 194
Layout dependence of CMOS Latch-up 194
A Model to Understand Current Consumption, Maximum Operating Frequency And Scaling Trends Of MCML Frequency Dividers 191
An in-depth investigation of physical mechanisms governing SANOS memories characteristics 189
On the response of nanoelectrode capacitive biosensors to DNA and PNA strands 189
Modeling, design and characterization of a new Low Jitter analog Dual Tuning LC-VCO PLL Architecture 189
On the origin of the mobility reduction in n- and p-metal-oxide-semiconductor field effect transistors with hafnium-based/metal gate stacks 189
An improved procedure to extract the limiting carrier velocity in ultra scaled CMOS devices 188
Improved sensitivity of nanowire bio-FETs operated at high-frequency: a simulation study 188
Gain and noise in GaAs/AlGaAs avalanche photodiodes with thin multiplication regions 188
Modeling and Simulation of Small CCMV Virus Detection by means of High Frequency Impedance Spectroscopy at Nanoelectrodes 188
A Monte Carlo Technique to Investigate Signal Delays of Advanced Si BJT's up to High Currents 188
On the Surface-Roughness Scattering in Biaxially Strained n- and p-MOS Transistors 187
Multi-Subband Monte-Carlo study of Transport, Quantization and Electron Gas Degeneration in Ultra-Thin SOI n-MOSFETs 187
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 187
On the Optimization of SiGe and III-V Compound Hetero-Junction Tunnel FET Devices 187
"A Better Understanding of Substrate Enhanced Gate Current in VLSI MOSFET's and Flash Cells - Part II: Physical Analysis 186
A Study of Injection Conditions in the Substrate Hot Electron Induced Degradation of n-MOSFETs 186
Design, characterization and signal integrity analysis of a 2.5 Gb/s high-speed serial interface for automotive applications overarching the chip/PCB wall 186
Comparison of Semiclassical Transport Formulations Including Quantum Corrections for Advanced Devices with High-K Gate Stacks 186
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations 184
Efficient DC and AC simulation of nanoelectrode-nanoparticle interactions in capacitive biosensors 183
A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance 183
On the Response of Nanoelectrode Impedance Spectroscopy Measures to Plant, Animal, and Human Viruses 183
Toward computationally efficient Multi-Subband Monte Carlo simulations of nanoscale MOSFETs 182
The impact of interface states on the mobility and the drive current of III-V MOSFETs 182
Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells 181
Simulation of nano-biosensors based on conventional TCAD 180
Effects of the interaction of neighboring structures on the Latch-up behavior of C-MOS ICs 180
A combined transport-injection model for hot-electron and hot-hole injection in the gate oxide of MOS structures 179
Study of defects in Al2O3 blocking layers of TANOS memories by atomistic simulation, electrical characterization and physico-chemical material analyses 179
Sensitivity of Silicon Nanowire Biochemical Sensors 179
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits 179
Simulation and automated characterisation of optimal load for flexible composite generators based on piezoelectric ZnO nanowires 179
A Comparative Study of Hot-Carrier Induced Light Emission and Degradation in Bulk and SOI MOSFETs 178
Low-voltage high-performance III-V semiconductor MOSFETs for advanced CMOS nodes: impact of strain and interface traps 178
On the experimental determination of channel back-scattering in nanoMOSFETs 177
On the Adequacy of the Transmission Line Model to Describe the Graphene-Metal Contact Resistance 177
Investigation of Hot Carrier Stress and Constant Voltage Stress in High-κ Si-Based TFETs 177
Simulation of DC and RF Performance of the Graphene Base Transistor 176
Modeling of Field-Effect-Transistors with Strained and Alternative Channel Materials 176
Performance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications 175
A new analytical model for the energy dispersion in two-dimensional hole inversion layers 174
Quasi-Ballistic Gamma - and L-Valleys Transport in Ultrathin Body Strained (111) GaAs nMOSFETs 174
Non-local microscopic view of signal propagation times in BJTs biased up to high currents 173
Explanation of SILC probability density distributions with nonuniform generation of traps in the tunnel oxide of flash memory arrays 173
A simulation study of strain induced performance enhancements in InAs nanowire Tunnel-FETs 173
Use and comparative assessment of the CVFEM method for Poisson–Boltzmann and Poisson–Nernst–Planck three dimensional simulations of impedimetric nano-biosensors operated in the DC and AC small signal regimes 173
Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects 173
Monitoring Hot Carrier Degradation in SOI MOSFETs by Hot Carrier Luminescence Techniques 172
Analysis of Uniform Degradation in n-MOSFETs 172
Multi-scale strategy for high-k/metal-gate UTBB-FDSOI devices modeling with emphasis on back bias impact on mobility 172
A novel method to determine the Source and Drain resistances of individual MOSFETs 172
Latch-up in CMOS circuits: a review 171
Characterization and Modeling of long term retention in SONOS Non Volatile Memories 171
Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs 171
Modeling approaches for band-structure calculation in III-V FET quantum wells 171
Experimental Application of a Novel Technique to Extract Gate Bias Dependent Source and Drain Parasitic Resistances of GaAs MESFETs 170
Investigation of Strain Engineering in FinFETs Comprising Experimental Analysis and Numerical Simulations 170
A technique to model the AC response of diffuse layers at electrode/electrolyte interfaces and to efficiently simulate impedimetric biosensor arrays for many analyte configurations 170
Totale 20.921
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Categoria #
all - tutte 206.605
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 206.605
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20222.557 0 0 0 125 40 193 233 121 31 567 769 478
2022/20233.260 424 374 48 432 261 851 10 197 402 30 87 144
2023/20241.216 154 85 30 30 152 256 32 68 131 41 16 221
2024/20258.397 1.462 638 422 209 191 321 406 368 746 715 957 1.962
2025/202612.293 761 1.347 1.143 1.516 2.085 973 1.357 362 804 1.054 620 271
2026/20273.027 339 918 997 773 0 0 0 0 0 0 0 0
Totale 59.079