IRIS
SELMI, Luca
 Distribuzione geografica
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Continente #
NA - Nord America 33.118
AS - Asia 10.981
EU - Europa 7.939
SA - Sud America 2.179
AF - Africa 277
Continente sconosciuto - Info sul continente non disponibili 22
OC - Oceania 5
AN - Antartide 1
Totale 54.522
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Nazione #
US - Stati Uniti d'America 32.756
SG - Singapore 5.332
UA - Ucraina 2.242
CN - Cina 2.237
BR - Brasile 1.718
DE - Germania 1.364
HK - Hong Kong 1.042
IT - Italia 980
VN - Vietnam 867
FI - Finlandia 769
RU - Federazione Russa 633
FR - Francia 480
IE - Irlanda 404
SE - Svezia 316
TR - Turchia 312
IN - India 279
GB - Regno Unito 249
CA - Canada 220
AR - Argentina 165
BD - Bangladesh 154
KR - Corea 115
IQ - Iraq 99
MX - Messico 81
ZA - Sudafrica 78
EC - Ecuador 76
AT - Austria 73
JP - Giappone 73
PL - Polonia 72
CO - Colombia 66
ID - Indonesia 66
NL - Olanda 57
PK - Pakistan 57
ES - Italia 51
MA - Marocco 50
VE - Venezuela 46
BE - Belgio 39
CZ - Repubblica Ceca 39
PH - Filippine 38
CH - Svizzera 35
SA - Arabia Saudita 33
PY - Paraguay 32
CL - Cile 29
KE - Kenya 29
UZ - Uzbekistan 29
JO - Giordania 28
TN - Tunisia 26
LT - Lituania 23
AZ - Azerbaigian 22
TW - Taiwan 21
GR - Grecia 20
MY - Malesia 20
AE - Emirati Arabi Uniti 19
DZ - Algeria 19
EG - Egitto 16
BO - Bolivia 15
EU - Europa 15
PE - Perù 15
RO - Romania 15
OM - Oman 14
DO - Repubblica Dominicana 13
IL - Israele 13
UY - Uruguay 13
NP - Nepal 12
TH - Thailandia 12
AM - Armenia 11
ET - Etiopia 11
GE - Georgia 11
IR - Iran 9
RS - Serbia 9
BG - Bulgaria 8
KG - Kirghizistan 8
KZ - Kazakistan 8
PA - Panama 8
TG - Togo 8
CR - Costa Rica 7
NO - Norvegia 7
PS - Palestinian Territory 7
AL - Albania 6
CI - Costa d'Avorio 6
JM - Giamaica 6
LA - Repubblica Popolare Democratica del Laos 6
BH - Bahrain 5
LB - Libano 5
LV - Lettonia 5
MD - Moldavia 5
PT - Portogallo 5
XK - ???statistics.table.value.countryCode.XK??? 5
BB - Barbados 4
CG - Congo 4
CY - Cipro 4
EE - Estonia 4
GT - Guatemala 4
HU - Ungheria 4
LU - Lussemburgo 4
LY - Libia 4
MK - Macedonia 4
TT - Trinidad e Tobago 4
AO - Angola 3
BA - Bosnia-Erzegovina 3
BN - Brunei Darussalam 3
Totale 54.448
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Città #
Woodbridge 4.284
Fairfield 3.701
Ann Arbor 2.740
Houston 2.621
Ashburn 2.277
Singapore 1.992
Seattle 1.570
Jacksonville 1.503
Chandler 1.464
Wilmington 1.430
Cambridge 1.285
Beijing 1.121
Hong Kong 1.030
Dearborn 904
San Jose 541
Boardman 514
Udine 432
Dublin 397
Princeton 394
Lauterbourg 355
Los Angeles 323
Ho Chi Minh City 269
Izmir 245
New York 220
San Diego 191
Hanoi 189
Buffalo 173
Dallas 171
Hefei 171
The Dalles 161
São Paulo 148
Munich 135
Ottawa 127
Seoul 101
Des Moines 100
Redondo Beach 100
Santa Clara 99
Ogden 91
Grafing 71
Helsinki 67
Norwalk 67
Tokyo 62
Nanjing 61
Kunming 60
Düsseldorf 54
Warsaw 53
Vienna 50
Chennai 49
Orem 49
Atlanta 47
Mumbai 46
Rio de Janeiro 46
San Mateo 44
Frankfurt am Main 42
Montreal 39
Denver 38
Baghdad 37
Belo Horizonte 37
Johannesburg 37
Milan 37
Brasília 36
Brussels 36
Da Nang 36
Guangzhou 35
Amsterdam 34
Brno 34
Haiphong 33
Brooklyn 32
Poplar 32
Simi Valley 31
Chicago 30
Quito 30
London 29
Stockholm 29
Dhaka 28
Modena 28
Nairobi 28
Trieste 28
San Francisco 27
Mexico City 25
Rome 25
Zurich 25
Amman 24
Jinan 24
Nuremberg 24
Tashkent 24
Boston 23
Phoenix 23
Shanghai 23
Dong Ket 22
Cervignano Del Friuli 21
New Delhi 21
Porto Alegre 21
Baku 20
Campinas 20
Council Bluffs 20
Salvador 20
Indiana 19
Lahore 19
Manchester 19
Totale 35.720
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Nome #
Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells 1.666
ENBIOS-2D Lab 262
A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces 261
A CMOS Pixelated Nanocapacitor Biosensor Platform for High-Frequency Impedance Spectroscopy and Imaging 252
Improved surface roughness modeling and mobility projections in thin film MOSFETs 234
ENBIOS-1D Lab 231
A better understanding of the low-field mobility in Graphene Nano-ribbons 224
An Improved Nonlocal History-Dependent Model for Gain and Noise in Avalanche Photodiodes Based on Energy Balance Equation 217
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 217
A New Expression for the Gain-Noise Relation of Single-Carrier Avalanche Photodiodes With Arbitrary Staircase Multiplication Regions 215
Cathode Hot Electrons and Anode Hot Holes in Tunneling MOS Capacitors 213
Modeling charge collection in x-ray imagers 213
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits 213
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 211
Analysis of Dielectric Microbead Detection by Impedance Spectroscopy with Nanoribbons 204
Efficient Statistical Simulation of Intersymbol Interference and Jitter in High-Speed Serial Interfaces 203
Derivation and Numerical Verification of a Compact Analytical Model for the AC Admittance Response of Nanoelectrodes, Suitable for the Analysis and Optimization of Impedance Biosensors 201
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 200
A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors 199
Real-time imaging of microparticles and living cells with CMOS nanocapacitor arrays 199
Characterization and modelling of differential sensitivity of nanoribbon-based pH-sensors 199
An Experimental Study of Low Field Electron Mobility in Double-Gate, Ultra-Thin SOI MOSFETs 198
Trade-offs between tunneling and Hot-Carrier Injection in short channel Floating Gate MOSFETs 194
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 193
Effects of the interaction of neighboring structures on the Latch-up behavior of C-MOS ICs 192
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 192
3D-FBK pixelsensors:Recent beam tests results with irradiated devices 191
Influence of δ p-doping on the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation 191
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 191
Monte Carlo Simulation of Substrate Enhanced Electron Injection in Split-gate Memory Cells 189
A design methodology for MOS Current-Mode Logic Frequency Dividers 188
Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel 186
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs 185
Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint 185
Simulation analysis of III-V n-MOSFETs: channel materials, Fermi level pinning and biaxial strain 185
Models for the use of commercial TCAD in the analysis of silicon-based integrated biosensors 184
High-Frequency Nanocapacitor Arrays: Concept, Recent Developments, and Outlook 183
Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits 183
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits 183
Total Ionizing Dose Effects in Si-Based Tunnel FETs 182
Modeling and Simulation of Small CCMV Virus Detection by means of High Frequency Impedance Spectroscopy at Nanoelectrodes 181
A Study of Injection Conditions in the Substrate Hot Electron Induced Degradation of n-MOSFETs 180
Semi-analytic Modeling for Hot Carriers in Electron Devices 180
On the origin of the mobility reduction in n- and p-metal-oxide-semiconductor field effect transistors with hafnium-based/metal gate stacks 180
On the Optimization of SiGe and III-V Compound Hetero-Junction Tunnel FET Devices 180
An in-depth investigation of physical mechanisms governing SANOS memories characteristics 179
A Model to Understand Current Consumption, Maximum Operating Frequency And Scaling Trends Of MCML Frequency Dividers 179
An improved procedure to extract the limiting carrier velocity in ultra scaled CMOS devices 179
Improved sensitivity of nanowire bio-FETs operated at high-frequency: a simulation study 179
On the response of nanoelectrode capacitive biosensors to DNA and PNA strands 178
Multi-Subband Monte-Carlo study of Transport, Quantization and Electron Gas Degeneration in Ultra-Thin SOI n-MOSFETs 176
Modeling, design and characterization of a new Low Jitter analog Dual Tuning LC-VCO PLL Architecture 176
Gain and noise in GaAs/AlGaAs avalanche photodiodes with thin multiplication regions 176
A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance 176
Simulation of nano-biosensors based on conventional TCAD 175
Effects of the interaction of neighboring structures on the Latch-up behavior of C-MOS ICs 175
A Monte Carlo Technique to Investigate Signal Delays of Advanced Si BJT's up to High Currents 175
Layout dependence of CMOS Latch-up 175
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 173
On the Response of Nanoelectrode Impedance Spectroscopy Measures to Plant, Animal, and Human Viruses 173
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations 172
"A Better Understanding of Substrate Enhanced Gate Current in VLSI MOSFET's and Flash Cells - Part II: Physical Analysis 171
Simulation and automated characterisation of optimal load for flexible composite generators based on piezoelectric ZnO nanowires 171
On the Surface-Roughness Scattering in Biaxially Strained n- and p-MOS Transistors 170
On the experimental determination of channel back-scattering in nanoMOSFETs 170
Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects 170
A Comparative Study of Hot-Carrier Induced Light Emission and Degradation in Bulk and SOI MOSFETs 170
Efficient DC and AC simulation of nanoelectrode-nanoparticle interactions in capacitive biosensors 169
Study of defects in Al2O3 blocking layers of TANOS memories by atomistic simulation, electrical characterization and physico-chemical material analyses 169
Sensitivity of Silicon Nanowire Biochemical Sensors 169
The impact of interface states on the mobility and the drive current of III-V MOSFETs 169
Design, characterization and signal integrity analysis of a 2.5 Gb/s high-speed serial interface for automotive applications overarching the chip/PCB wall 169
Investigation of Hot Carrier Stress and Constant Voltage Stress in High-κ Si-Based TFETs 168
Comparison of Semiclassical Transport Formulations Including Quantum Corrections for Advanced Devices with High-K Gate Stacks 168
Modeling of Field-Effect-Transistors with Strained and Alternative Channel Materials 167
Toward computationally efficient Multi-Subband Monte Carlo simulations of nanoscale MOSFETs 166
A new analytical model for the energy dispersion in two-dimensional hole inversion layers 165
Simulation of DC and RF Performance of the Graphene Base Transistor 165
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits 165
Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells 164
Quasi-Ballistic Gamma - and L-Valleys Transport in Ultrathin Body Strained (111) GaAs nMOSFETs 164
Low-voltage high-performance III-V semiconductor MOSFETs for advanced CMOS nodes: impact of strain and interface traps 164
A novel method to determine the Source and Drain resistances of individual MOSFETs 164
A combined transport-injection model for hot-electron and hot-hole injection in the gate oxide of MOS structures 163
Analysis of Uniform Degradation in n-MOSFETs 162
Experimental Application of a Novel Technique to Extract Gate Bias Dependent Source and Drain Parasitic Resistances of GaAs MESFETs 162
A simulation study of strain induced performance enhancements in InAs nanowire Tunnel-FETs 162
Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs 162
Multi-scale strategy for high-k/metal-gate UTBB-FDSOI devices modeling with emphasis on back bias impact on mobility 162
Monitoring Hot Carrier Degradation in SOI MOSFETs by Hot Carrier Luminescence Techniques 161
Non-local microscopic view of signal propagation times in BJTs biased up to high currents 161
Technology Computer Aided Design 161
Modeling approaches for band-structure calculation in III-V FET quantum wells 161
Performance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications 161
Performance analysis of different SRAM cell topologies employing tunnel-FETs 161
Explanation of SILC probability density distributions with nonuniform generation of traps in the tunnel oxide of flash memory arrays 160
A technique to model the AC response of diffuse layers at electrode/electrolyte interfaces and to efficiently simulate impedimetric biosensor arrays for many analyte configurations 160
On the Adequacy of the Transmission Line Model to Describe the Graphene-Metal Contact Resistance 160
Latch-up in CMOS circuits: a review 159
Modeling of End of the Roadmap nMOSFET with Alternative Channel Material 159
Totale 19.750
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Categoria #
all - tutte 179.736
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 179.736
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.104 0 0 0 0 0 0 0 0 0 227 634 243
2021/20223.114 165 277 115 125 40 193 233 121 31 567 769 478
2022/20233.260 424 374 48 432 261 851 10 197 402 30 87 144
2023/20241.216 154 85 30 30 152 256 32 68 131 41 16 221
2024/20258.397 1.462 638 422 209 191 321 406 368 746 715 957 1.962
2025/202611.177 761 1.347 1.143 1.516 2.085 973 1.357 362 804 829 0 0
Totale 54.936