IRIS
SELMI, Luca
 Distribuzione geografica
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Continente #
NA - Nord America 35.206
AS - Asia 11.171
EU - Europa 8.258
SA - Sud America 2.243
Continente sconosciuto - Info sul continente non disponibili 436
AF - Africa 280
OC - Oceania 7
AN - Antartide 1
Totale 57.602
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Nazione #
US - Stati Uniti d'America 34.751
SG - Singapore 5.394
CN - Cina 2.291
UA - Ucraina 2.243
BR - Brasile 1.741
DE - Germania 1.366
IT - Italia 1.262
HK - Hong Kong 1.068
VN - Vietnam 875
FI - Finlandia 769
RU - Federazione Russa 633
FR - Francia 485
IE - Irlanda 404
SE - Svezia 316
TR - Turchia 314
IN - India 282
CA - Canada 260
GB - Regno Unito 258
AR - Argentina 172
BD - Bangladesh 162
KR - Corea 115
IQ - Iraq 99
MX - Messico 94
EC - Ecuador 83
CO - Colombia 80
ZA - Sudafrica 79
AT - Austria 75
JP - Giappone 75
PL - Polonia 75
ID - Indonesia 69
NL - Olanda 60
PK - Pakistan 57
ES - Italia 56
VE - Venezuela 54
MA - Marocco 50
PH - Filippine 42
BE - Belgio 40
CZ - Repubblica Ceca 39
CH - Svizzera 35
SA - Arabia Saudita 35
PY - Paraguay 33
CL - Cile 31
KE - Kenya 30
UZ - Uzbekistan 29
JO - Giordania 28
MY - Malesia 27
TN - Tunisia 26
LT - Lituania 25
TW - Taiwan 23
AZ - Azerbaigian 22
GR - Grecia 20
AE - Emirati Arabi Uniti 19
DZ - Algeria 19
JM - Giamaica 17
EG - Egitto 16
PE - Perù 16
BO - Bolivia 15
EU - Europa 15
RO - Romania 15
OM - Oman 14
TH - Thailandia 14
UY - Uruguay 14
CR - Costa Rica 13
DO - Repubblica Dominicana 13
IL - Israele 13
NP - Nepal 13
AM - Armenia 11
ET - Etiopia 11
GE - Georgia 11
IR - Iran 9
RS - Serbia 9
BG - Bulgaria 8
GT - Guatemala 8
KG - Kirghizistan 8
KZ - Kazakistan 8
PA - Panama 8
PS - Palestinian Territory 8
TG - Togo 8
TT - Trinidad e Tobago 8
AL - Albania 7
NO - Norvegia 7
BB - Barbados 6
CI - Costa d'Avorio 6
LA - Repubblica Popolare Democratica del Laos 6
LB - Libano 6
MD - Moldavia 6
BH - Bahrain 5
HU - Ungheria 5
LV - Lettonia 5
PT - Portogallo 5
SV - El Salvador 5
XK - ???statistics.table.value.countryCode.XK??? 5
CG - Congo 4
CY - Cipro 4
EE - Estonia 4
LU - Lussemburgo 4
LY - Libia 4
MK - Macedonia 4
PR - Porto Rico 4
SK - Slovacchia (Repubblica Slovacca) 4
Totale 57.099
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Città #
Woodbridge 4.284
Fairfield 3.704
Ann Arbor 2.740
Houston 2.631
Ashburn 2.577
Singapore 2.020
Seattle 1.571
Jacksonville 1.508
Chandler 1.465
Wilmington 1.432
Cambridge 1.285
Beijing 1.143
Hong Kong 1.056
Dearborn 904
San Jose 873
Boardman 522
Udine 435
Council Bluffs 411
Dublin 397
Princeton 395
Lauterbourg 355
Los Angeles 344
Ho Chi Minh City 273
Izmir 245
New York 237
Dallas 197
San Diego 191
Hanoi 190
Santa Clara 182
Buffalo 177
Hefei 171
The Dalles 161
São Paulo 149
Milan 147
Munich 135
Ottawa 128
Des Moines 102
Seoul 101
Redondo Beach 100
Ogden 91
Grafing 71
Helsinki 67
Norwalk 67
Tokyo 62
Nanjing 61
Atlanta 60
Kunming 60
Düsseldorf 54
Warsaw 53
Orem 52
Vienna 50
Chennai 49
Denver 47
Chicago 46
Mumbai 46
Phoenix 46
Rio de Janeiro 46
Frankfurt am Main 44
San Mateo 44
Miano 42
Montreal 41
Brooklyn 39
Baghdad 37
Belo Horizonte 37
Brasília 37
Johannesburg 37
Brussels 36
Da Nang 36
Guangzhou 35
Amsterdam 34
Brno 34
Haiphong 34
Mexico City 33
San Francisco 33
Modena 32
Poplar 32
Quito 32
Simi Valley 31
London 30
Rome 30
Nairobi 29
Stockholm 29
Trieste 29
Boston 28
Dhaka 28
Shanghai 26
Zurich 25
Amman 24
Jinan 24
Nuremberg 24
Tashkent 24
Dong Ket 22
Cervignano Del Friuli 21
New Delhi 21
Porto Alegre 21
Toronto 21
Baku 20
Bogotá 20
Campinas 20
Manchester 20
Totale 37.262
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Nome #
Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells 1.674
A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces 280
ENBIOS-2D Lab 280
A CMOS Pixelated Nanocapacitor Biosensor Platform for High-Frequency Impedance Spectroscopy and Imaging 258
ENBIOS-1D Lab 246
Improved surface roughness modeling and mobility projections in thin film MOSFETs 243
A better understanding of the low-field mobility in Graphene Nano-ribbons 234
An Improved Nonlocal History-Dependent Model for Gain and Noise in Avalanche Photodiodes Based on Energy Balance Equation 231
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 224
A New Expression for the Gain-Noise Relation of Single-Carrier Avalanche Photodiodes With Arbitrary Staircase Multiplication Regions 222
Cathode Hot Electrons and Anode Hot Holes in Tunneling MOS Capacitors 220
Modeling charge collection in x-ray imagers 219
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 218
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits 218
Analysis of Dielectric Microbead Detection by Impedance Spectroscopy with Nanoribbons 213
Efficient Statistical Simulation of Intersymbol Interference and Jitter in High-Speed Serial Interfaces 212
Characterization and modelling of differential sensitivity of nanoribbon-based pH-sensors 211
An Experimental Study of Low Field Electron Mobility in Double-Gate, Ultra-Thin SOI MOSFETs 208
Real-time imaging of microparticles and living cells with CMOS nanocapacitor arrays 205
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 205
Derivation and Numerical Verification of a Compact Analytical Model for the AC Admittance Response of Nanoelectrodes, Suitable for the Analysis and Optimization of Impedance Biosensors 205
A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors 203
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 203
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 203
Effects of the interaction of neighboring structures on the Latch-up behavior of C-MOS ICs 201
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 199
Trade-offs between tunneling and Hot-Carrier Injection in short channel Floating Gate MOSFETs 198
High-Frequency Nanocapacitor Arrays: Concept, Recent Developments, and Outlook 197
Influence of δ p-doping on the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation 197
3D-FBK pixelsensors:Recent beam tests results with irradiated devices 196
A design methodology for MOS Current-Mode Logic Frequency Dividers 196
Monte Carlo Simulation of Substrate Enhanced Electron Injection in Split-gate Memory Cells 195
Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel 194
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs 194
Semi-analytic Modeling for Hot Carriers in Electron Devices 193
Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint 193
Simulation analysis of III-V n-MOSFETs: channel materials, Fermi level pinning and biaxial strain 193
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits 192
Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits 190
Models for the use of commercial TCAD in the analysis of silicon-based integrated biosensors 189
Total Ionizing Dose Effects in Si-Based Tunnel FETs 189
Modeling and Simulation of Small CCMV Virus Detection by means of High Frequency Impedance Spectroscopy at Nanoelectrodes 188
An in-depth investigation of physical mechanisms governing SANOS memories characteristics 187
On the origin of the mobility reduction in n- and p-metal-oxide-semiconductor field effect transistors with hafnium-based/metal gate stacks 186
Modeling, design and characterization of a new Low Jitter analog Dual Tuning LC-VCO PLL Architecture 185
Improved sensitivity of nanowire bio-FETs operated at high-frequency: a simulation study 185
A Monte Carlo Technique to Investigate Signal Delays of Advanced Si BJT's up to High Currents 185
On the Optimization of SiGe and III-V Compound Hetero-Junction Tunnel FET Devices 185
Layout dependence of CMOS Latch-up 185
On the response of nanoelectrode capacitive biosensors to DNA and PNA strands 184
An improved procedure to extract the limiting carrier velocity in ultra scaled CMOS devices 184
A Study of Injection Conditions in the Substrate Hot Electron Induced Degradation of n-MOSFETs 183
A Model to Understand Current Consumption, Maximum Operating Frequency And Scaling Trends Of MCML Frequency Dividers 183
Gain and noise in GaAs/AlGaAs avalanche photodiodes with thin multiplication regions 183
Design, characterization and signal integrity analysis of a 2.5 Gb/s high-speed serial interface for automotive applications overarching the chip/PCB wall 183
Comparison of Semiclassical Transport Formulations Including Quantum Corrections for Advanced Devices with High-K Gate Stacks 183
On the Surface-Roughness Scattering in Biaxially Strained n- and p-MOS Transistors 181
"A Better Understanding of Substrate Enhanced Gate Current in VLSI MOSFET's and Flash Cells - Part II: Physical Analysis 180
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 180
The impact of interface states on the mobility and the drive current of III-V MOSFETs 180
A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance 180
Multi-Subband Monte-Carlo study of Transport, Quantization and Electron Gas Degeneration in Ultra-Thin SOI n-MOSFETs 179
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations 179
Effects of the interaction of neighboring structures on the Latch-up behavior of C-MOS ICs 179
On the Response of Nanoelectrode Impedance Spectroscopy Measures to Plant, Animal, and Human Viruses 179
Simulation of nano-biosensors based on conventional TCAD 178
Sensitivity of Silicon Nanowire Biochemical Sensors 177
A Comparative Study of Hot-Carrier Induced Light Emission and Degradation in Bulk and SOI MOSFETs 177
Study of defects in Al2O3 blocking layers of TANOS memories by atomistic simulation, electrical characterization and physico-chemical material analyses 176
Toward computationally efficient Multi-Subband Monte Carlo simulations of nanoscale MOSFETs 176
Low-voltage high-performance III-V semiconductor MOSFETs for advanced CMOS nodes: impact of strain and interface traps 176
Efficient DC and AC simulation of nanoelectrode-nanoparticle interactions in capacitive biosensors 175
Simulation and automated characterisation of optimal load for flexible composite generators based on piezoelectric ZnO nanowires 175
Investigation of Hot Carrier Stress and Constant Voltage Stress in High-κ Si-Based TFETs 175
Simulation of DC and RF Performance of the Graphene Base Transistor 174
Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells 173
On the Adequacy of the Transmission Line Model to Describe the Graphene-Metal Contact Resistance 173
On the experimental determination of channel back-scattering in nanoMOSFETs 172
A combined transport-injection model for hot-electron and hot-hole injection in the gate oxide of MOS structures 172
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits 172
Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects 172
Non-local microscopic view of signal propagation times in BJTs biased up to high currents 171
A new analytical model for the energy dispersion in two-dimensional hole inversion layers 171
Performance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications 171
Modeling of Field-Effect-Transistors with Strained and Alternative Channel Materials 171
Quasi-Ballistic Gamma - and L-Valleys Transport in Ultrathin Body Strained (111) GaAs nMOSFETs 170
Monitoring Hot Carrier Degradation in SOI MOSFETs by Hot Carrier Luminescence Techniques 169
Analysis of Uniform Degradation in n-MOSFETs 169
Modeling approaches for band-structure calculation in III-V FET quantum wells 169
A novel method to determine the Source and Drain resistances of individual MOSFETs 169
A simulation study of strain induced performance enhancements in InAs nanowire Tunnel-FETs 168
Characterization and Modeling of long term retention in SONOS Non Volatile Memories 168
Multi-scale strategy for high-k/metal-gate UTBB-FDSOI devices modeling with emphasis on back bias impact on mobility 168
An accurate System for automated On-wafer Characterization of Three-port Devices 167
Latch-up in CMOS circuits: a review 167
Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs 167
Use and comparative assessment of the CVFEM method for Poisson–Boltzmann and Poisson–Nernst–Planck three dimensional simulations of impedimetric nano-biosensors operated in the DC and AC small signal regimes 167
Performance analysis of different SRAM cell topologies employing tunnel-FETs 167
Modeling of End of the Roadmap nMOSFET with Alternative Channel Material 166
An improved empirical approach to introduce quantization effects in the transport direction in multi-subband Monte Carlo simulations 166
Totale 20.521
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Categoria #
all - tutte 198.416
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 198.416
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20222.672 0 0 115 125 40 193 233 121 31 567 769 478
2022/20233.260 424 374 48 432 261 851 10 197 402 30 87 144
2023/20241.216 154 85 30 30 152 256 32 68 131 41 16 221
2024/20258.397 1.462 638 422 209 191 321 406 368 746 715 957 1.962
2025/202612.293 761 1.347 1.143 1.516 2.085 973 1.357 362 804 1.054 620 271
2026/20271.550 339 918 293 0 0 0 0 0 0 0 0 0
Totale 57.602