IRIS
SELMI, Luca
 Distribuzione geografica
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Continente #
NA - Nord America 31.881
AS - Asia 9.384
EU - Europa 7.382
SA - Sud America 1.890
AF - Africa 175
Continente sconosciuto - Info sul continente non disponibili 21
OC - Oceania 4
AN - Antartide 1
Totale 50.738
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Nazione #
US - Stati Uniti d'America 31.561
SG - Singapore 4.671
UA - Ucraina 2.232
CN - Cina 2.022
BR - Brasile 1.586
DE - Germania 1.339
HK - Hong Kong 995
IT - Italia 964
FI - Finlandia 741
VN - Vietnam 659
RU - Federazione Russa 616
IE - Irlanda 400
SE - Svezia 316
TR - Turchia 277
GB - Regno Unito 229
CA - Canada 209
IN - India 177
KR - Corea 112
AR - Argentina 109
FR - Francia 98
BD - Bangladesh 88
AT - Austria 71
MX - Messico 65
PL - Polonia 62
JP - Giappone 60
EC - Ecuador 58
IQ - Iraq 52
ZA - Sudafrica 52
NL - Olanda 48
ID - Indonesia 43
ES - Italia 40
CZ - Repubblica Ceca 38
BE - Belgio 36
CH - Svizzera 34
MA - Marocco 34
CO - Colombia 33
PY - Paraguay 27
PK - Pakistan 26
CL - Cile 23
LT - Lituania 22
VE - Venezuela 21
GR - Grecia 19
UZ - Uzbekistan 19
KE - Kenya 18
TW - Taiwan 18
AZ - Azerbaigian 16
JO - Giordania 16
EU - Europa 15
RO - Romania 15
AE - Emirati Arabi Uniti 13
TN - Tunisia 13
SA - Arabia Saudita 12
UY - Uruguay 12
EG - Egitto 11
GE - Georgia 11
PE - Perù 11
PH - Filippine 11
AM - Armenia 10
DO - Repubblica Dominicana 10
DZ - Algeria 10
IL - Israele 9
IR - Iran 9
KG - Kirghizistan 8
TG - Togo 8
BG - Bulgaria 7
BO - Bolivia 7
NO - Norvegia 7
NP - Nepal 7
ET - Etiopia 6
OM - Oman 6
CI - Costa d'Avorio 5
KZ - Kazakistan 5
LA - Repubblica Popolare Democratica del Laos 5
LV - Lettonia 5
PA - Panama 5
PS - Palestinian Territory 5
BB - Barbados 4
CR - Costa Rica 4
CY - Cipro 4
EE - Estonia 4
HU - Ungheria 4
JM - Giamaica 4
LB - Libano 4
LU - Lussemburgo 4
MD - Moldavia 4
TT - Trinidad e Tobago 4
XK - ???statistics.table.value.countryCode.XK??? 4
AL - Albania 3
GT - Guatemala 3
HR - Croazia 3
MK - Macedonia 3
NZ - Nuova Zelanda 3
PT - Portogallo 3
RS - Serbia 3
SI - Slovenia 3
SK - Slovacchia (Repubblica Slovacca) 3
SV - El Salvador 3
TH - Thailandia 3
VC - Saint Vincent e Grenadine 3
A2 - ???statistics.table.value.countryCode.A2??? 2
Totale 50.692
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Città #
Woodbridge 4.284
Fairfield 3.701
Ann Arbor 2.740
Houston 2.621
Ashburn 2.058
Singapore 1.736
Seattle 1.570
Jacksonville 1.503
Chandler 1.464
Wilmington 1.430
Cambridge 1.285
Beijing 1.099
Hong Kong 990
Dearborn 904
Boardman 514
Udine 432
Princeton 394
Dublin 392
Los Angeles 292
Izmir 241
Ho Chi Minh City 227
New York 215
San Diego 191
Hefei 171
Buffalo 168
Dallas 166
Hanoi 139
São Paulo 137
Munich 135
Ottawa 127
Redondo Beach 100
Seoul 100
Des Moines 97
Ogden 91
Santa Clara 75
Grafing 71
Norwalk 67
The Dalles 65
Kunming 59
Nanjing 58
Düsseldorf 54
Tokyo 53
Warsaw 50
Vienna 48
San Mateo 44
Rio de Janeiro 41
Helsinki 39
Mumbai 38
Denver 37
Milan 36
Montreal 36
Atlanta 35
Brussels 35
Belo Horizonte 34
Brno 34
Chennai 34
Guangzhou 34
Brasília 33
Brooklyn 31
Johannesburg 31
Poplar 31
Simi Valley 31
Stockholm 29
Modena 28
San Francisco 27
Trieste 27
Amsterdam 26
Orem 26
Frankfurt am Main 25
Haiphong 25
Mexico City 25
Rome 25
Chicago 24
Da Nang 24
Jinan 24
London 24
Zurich 24
Boston 23
Phoenix 23
Dong Ket 22
Cervignano Del Friuli 21
Dhaka 20
Porto Alegre 20
Quito 20
Indiana 19
Shanghai 19
Shenyang 19
Fortaleza 18
Hangzhou 18
Lauterbourg 18
Nuremberg 18
Portsmouth 18
Salvador 18
Wuhan 18
Campinas 17
Curitiba 17
Nairobi 17
Nanchang 17
Tashkent 17
Asunción 16
Totale 33.764
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Nome #
Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells 1.656
ENBIOS-2D Lab 239
A CMOS Pixelated Nanocapacitor Biosensor Platform for High-Frequency Impedance Spectroscopy and Imaging 238
A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces 230
Improved surface roughness modeling and mobility projections in thin film MOSFETs 222
A better understanding of the low-field mobility in Graphene Nano-ribbons 208
Modeling charge collection in x-ray imagers 206
ENBIOS-1D Lab 205
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits 205
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 204
Cathode Hot Electrons and Anode Hot Holes in Tunneling MOS Capacitors 203
A New Expression for the Gain-Noise Relation of Single-Carrier Avalanche Photodiodes With Arbitrary Staircase Multiplication Regions 201
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 200
Efficient Statistical Simulation of Intersymbol Interference and Jitter in High-Speed Serial Interfaces 196
An Improved Nonlocal History-Dependent Model for Gain and Noise in Avalanche Photodiodes Based on Energy Balance Equation 195
An Experimental Study of Low Field Electron Mobility in Double-Gate, Ultra-Thin SOI MOSFETs 192
Derivation and Numerical Verification of a Compact Analytical Model for the AC Admittance Response of Nanoelectrodes, Suitable for the Analysis and Optimization of Impedance Biosensors 192
Real-time imaging of microparticles and living cells with CMOS nanocapacitor arrays 191
Trade-offs between tunneling and Hot-Carrier Injection in short channel Floating Gate MOSFETs 190
Characterization and modelling of differential sensitivity of nanoribbon-based pH-sensors 188
Analysis of Dielectric Microbead Detection by Impedance Spectroscopy with Nanoribbons 188
Effects of the interaction of neighboring structures on the Latch-up behavior of C-MOS ICs 185
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 185
A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors 184
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 182
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 182
Monte Carlo Simulation of Substrate Enhanced Electron Injection in Split-gate Memory Cells 179
Semi-analytic Modeling for Hot Carriers in Electron Devices 178
Simulation analysis of III-V n-MOSFETs: channel materials, Fermi level pinning and biaxial strain 178
Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel 177
Influence of δ p-doping on the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation 177
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 177
3D-FBK pixelsensors:Recent beam tests results with irradiated devices 176
A design methodology for MOS Current-Mode Logic Frequency Dividers 175
A Study of Injection Conditions in the Substrate Hot Electron Induced Degradation of n-MOSFETs 174
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs 174
Models for the use of commercial TCAD in the analysis of silicon-based integrated biosensors 172
Improved sensitivity of nanowire bio-FETs operated at high-frequency: a simulation study 172
High-Frequency Nanocapacitor Arrays: Concept, Recent Developments, and Outlook 171
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits 171
An improved procedure to extract the limiting carrier velocity in ultra scaled CMOS devices 170
Modeling and Simulation of Small CCMV Virus Detection by means of High Frequency Impedance Spectroscopy at Nanoelectrodes 170
Total Ionizing Dose Effects in Si-Based Tunnel FETs 170
Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint 169
Gain and noise in GaAs/AlGaAs avalanche photodiodes with thin multiplication regions 168
Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits 168
On the origin of the mobility reduction in n- and p-metal-oxide-semiconductor field effect transistors with hafnium-based/metal gate stacks 168
Layout dependence of CMOS Latch-up 168
Simulation and automated characterisation of optimal load for flexible composite generators based on piezoelectric ZnO nanowires 167
A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance 167
An in-depth investigation of physical mechanisms governing SANOS memories characteristics 166
On the response of nanoelectrode capacitive biosensors to DNA and PNA strands 166
Effects of the interaction of neighboring structures on the Latch-up behavior of C-MOS ICs 166
On the Optimization of SiGe and III-V Compound Hetero-Junction Tunnel FET Devices 165
A Model to Understand Current Consumption, Maximum Operating Frequency And Scaling Trends Of MCML Frequency Dividers 164
Modeling, design and characterization of a new Low Jitter analog Dual Tuning LC-VCO PLL Architecture 164
On the Response of Nanoelectrode Impedance Spectroscopy Measures to Plant, Animal, and Human Viruses 164
On the experimental determination of channel back-scattering in nanoMOSFETs 163
A Monte Carlo Technique to Investigate Signal Delays of Advanced Si BJT's up to High Currents 163
Multi-Subband Monte-Carlo study of Transport, Quantization and Electron Gas Degeneration in Ultra-Thin SOI n-MOSFETs 161
Sensitivity of Silicon Nanowire Biochemical Sensors 161
On the Surface-Roughness Scattering in Biaxially Strained n- and p-MOS Transistors 160
Design, characterization and signal integrity analysis of a 2.5 Gb/s high-speed serial interface for automotive applications overarching the chip/PCB wall 160
The impact of interface states on the mobility and the drive current of III-V MOSFETs 159
A Comparative Study of Hot-Carrier Induced Light Emission and Degradation in Bulk and SOI MOSFETs 159
Comparison of Semiclassical Transport Formulations Including Quantum Corrections for Advanced Devices with High-K Gate Stacks 159
Efficient DC and AC simulation of nanoelectrode-nanoparticle interactions in capacitive biosensors 158
Simulation of nano-biosensors based on conventional TCAD 158
Investigation of Hot Carrier Stress and Constant Voltage Stress in High-κ Si-Based TFETs 158
"A Better Understanding of Substrate Enhanced Gate Current in VLSI MOSFET's and Flash Cells - Part II: Physical Analysis 157
Monitoring Hot Carrier Degradation in SOI MOSFETs by Hot Carrier Luminescence Techniques 157
Experimental Application of a Novel Technique to Extract Gate Bias Dependent Source and Drain Parasitic Resistances of GaAs MESFETs 157
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 157
Quasi-Ballistic Gamma - and L-Valleys Transport in Ultrathin Body Strained (111) GaAs nMOSFETs 156
Study of defects in Al2O3 blocking layers of TANOS memories by atomistic simulation, electrical characterization and physico-chemical material analyses 155
Modeling of Field-Effect-Transistors with Strained and Alternative Channel Materials 155
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations 155
Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects 155
A novel method to determine the Source and Drain resistances of individual MOSFETs 155
Simulation of DC and RF Performance of the Graphene Base Transistor 154
Modeling approaches for band-structure calculation in III-V FET quantum wells 154
Analysis of Uniform Degradation in n-MOSFETs 153
Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs 153
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits 153
Latch-up in CMOS circuits: a review 152
Non-local microscopic view of signal propagation times in BJTs biased up to high currents 152
Technology Computer Aided Design 152
Technology Oriented Analytical Models of MOSFETs in the Quasi Ballistic Regime 152
Toward computationally efficient Multi-Subband Monte Carlo simulations of nanoscale MOSFETs 152
Small Signal MMIC Amplifiers with Bridged T-coil Matching Networks 152
Low-voltage high-performance III-V semiconductor MOSFETs for advanced CMOS nodes: impact of strain and interface traps 152
Modeling of End of the Roadmap nMOSFET with Alternative Channel Material 151
A technique to model the AC response of diffuse layers at electrode/electrolyte interfaces and to efficiently simulate impedimetric biosensor arrays for many analyte configurations 151
A new analytical model for the energy dispersion in two-dimensional hole inversion layers 150
Experimental Characterization of Statistically Independent Defects in Gate Dielectrics - Part I: Description and Validation of the Model 150
A combined transport-injection model for hot-electron and hot-hole injection in the gate oxide of MOS structures 149
Explanation of SILC probability density distributions with nonuniform generation of traps in the tunnel oxide of flash memory arrays 149
A simulation study of strain induced performance enhancements in InAs nanowire Tunnel-FETs 149
Impact Ionization and Photon Emission in MOS Capacitors and FETs 149
Performance analysis of different SRAM cell topologies employing tunnel-FETs 149
Totale 18.614
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Categoria #
all - tutte 172.559
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 172.559
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20213.459 0 0 0 0 0 777 312 545 721 227 634 243
2021/20223.114 165 277 115 125 40 193 233 121 31 567 769 478
2022/20233.260 424 374 48 432 261 851 10 197 402 30 87 144
2023/20241.216 154 85 30 30 152 256 32 68 131 41 16 221
2024/20258.397 1.462 638 422 209 191 321 406 368 746 715 957 1.962
2025/20267.393 761 1.347 1.143 1.516 2.085 541 0 0 0 0 0 0
Totale 51.152