IRIS
SELMI, Luca
 Distribuzione geografica
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Continente #
NA - Nord America 34.357
AS - Asia 11.085
EU - Europa 7.991
SA - Sud America 2.199
AF - Africa 277
Continente sconosciuto - Info sul continente non disponibili 22
OC - Oceania 5
AN - Antartide 1
Totale 55.937
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Nazione #
US - Stati Uniti d'America 33.939
SG - Singapore 5.376
CN - Cina 2.275
UA - Ucraina 2.243
BR - Brasile 1.728
DE - Germania 1.366
HK - Hong Kong 1.057
IT - Italia 1.006
VN - Vietnam 869
FI - Finlandia 769
RU - Federazione Russa 633
FR - Francia 484
IE - Irlanda 404
SE - Svezia 316
TR - Turchia 314
IN - India 279
GB - Regno Unito 252
CA - Canada 250
AR - Argentina 166
BD - Bangladesh 155
KR - Corea 115
IQ - Iraq 99
MX - Messico 87
ZA - Sudafrica 78
EC - Ecuador 76
AT - Austria 75
JP - Giappone 74
PL - Polonia 74
CO - Colombia 68
ID - Indonesia 66
NL - Olanda 59
PK - Pakistan 57
ES - Italia 55
MA - Marocco 50
VE - Venezuela 50
BE - Belgio 40
CZ - Repubblica Ceca 39
PH - Filippine 38
CH - Svizzera 35
PY - Paraguay 33
SA - Arabia Saudita 33
CL - Cile 31
KE - Kenya 29
UZ - Uzbekistan 29
JO - Giordania 28
TN - Tunisia 26
LT - Lituania 24
AZ - Azerbaigian 22
MY - Malesia 21
TW - Taiwan 21
GR - Grecia 20
AE - Emirati Arabi Uniti 19
DZ - Algeria 19
EG - Egitto 16
BO - Bolivia 15
EU - Europa 15
PE - Perù 15
RO - Romania 15
JM - Giamaica 14
OM - Oman 14
DO - Repubblica Dominicana 13
IL - Israele 13
UY - Uruguay 13
NP - Nepal 12
TH - Thailandia 12
AM - Armenia 11
ET - Etiopia 11
GE - Georgia 11
IR - Iran 9
RS - Serbia 9
BG - Bulgaria 8
CR - Costa Rica 8
KG - Kirghizistan 8
KZ - Kazakistan 8
PA - Panama 8
TG - Togo 8
TT - Trinidad e Tobago 8
AL - Albania 7
GT - Guatemala 7
NO - Norvegia 7
PS - Palestinian Territory 7
CI - Costa d'Avorio 6
LA - Repubblica Popolare Democratica del Laos 6
MD - Moldavia 6
BB - Barbados 5
BH - Bahrain 5
HU - Ungheria 5
LB - Libano 5
LV - Lettonia 5
PT - Portogallo 5
SV - El Salvador 5
XK - ???statistics.table.value.countryCode.XK??? 5
CG - Congo 4
CY - Cipro 4
EE - Estonia 4
LU - Lussemburgo 4
LY - Libia 4
MK - Macedonia 4
SK - Slovacchia (Repubblica Slovacca) 4
AO - Angola 3
Totale 55.862
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Città #
Woodbridge 4.284
Fairfield 3.703
Ann Arbor 2.740
Houston 2.630
Ashburn 2.317
Singapore 2.008
Seattle 1.571
Jacksonville 1.507
Chandler 1.464
Wilmington 1.431
Cambridge 1.285
Beijing 1.133
Hong Kong 1.045
Dearborn 904
San Jose 797
Boardman 522
Udine 435
Dublin 397
Princeton 394
Lauterbourg 355
Los Angeles 338
Ho Chi Minh City 270
Council Bluffs 256
Izmir 245
New York 234
San Diego 191
Hanoi 190
Dallas 189
Buffalo 177
Hefei 171
The Dalles 161
Santa Clara 156
São Paulo 148
Munich 135
Ottawa 128
Des Moines 101
Seoul 101
Redondo Beach 100
Ogden 91
Grafing 71
Helsinki 67
Norwalk 67
Tokyo 62
Nanjing 61
Atlanta 60
Kunming 60
Düsseldorf 54
Warsaw 53
Orem 52
Vienna 50
Chennai 49
Mumbai 46
Rio de Janeiro 46
Denver 44
Frankfurt am Main 44
San Mateo 44
Milan 40
Montreal 40
Baghdad 37
Belo Horizonte 37
Johannesburg 37
Brasília 36
Brussels 36
Da Nang 36
Brooklyn 35
Chicago 35
Guangzhou 35
Amsterdam 34
Brno 34
Phoenix 34
Haiphong 33
Poplar 32
San Francisco 32
Simi Valley 31
London 30
Mexico City 30
Quito 30
Stockholm 29
Trieste 29
Dhaka 28
Modena 28
Nairobi 28
Rome 27
Boston 25
Zurich 25
Amman 24
Jinan 24
Nuremberg 24
Shanghai 24
Tashkent 24
Dong Ket 22
Cervignano Del Friuli 21
New Delhi 21
Porto Alegre 21
Baku 20
Campinas 20
Manchester 20
Salvador 20
Toronto 20
Indiana 19
Totale 36.501
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Nome #
Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells 1.670
ENBIOS-2D Lab 274
A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces 273
A CMOS Pixelated Nanocapacitor Biosensor Platform for High-Frequency Impedance Spectroscopy and Imaging 256
ENBIOS-1D Lab 244
Improved surface roughness modeling and mobility projections in thin film MOSFETs 239
A better understanding of the low-field mobility in Graphene Nano-ribbons 227
An Improved Nonlocal History-Dependent Model for Gain and Noise in Avalanche Photodiodes Based on Energy Balance Equation 226
A New Expression for the Gain-Noise Relation of Single-Carrier Avalanche Photodiodes With Arbitrary Staircase Multiplication Regions 220
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 220
Cathode Hot Electrons and Anode Hot Holes in Tunneling MOS Capacitors 218
Modeling charge collection in x-ray imagers 218
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 215
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits 214
Efficient Statistical Simulation of Intersymbol Interference and Jitter in High-Speed Serial Interfaces 209
Analysis of Dielectric Microbead Detection by Impedance Spectroscopy with Nanoribbons 209
An Experimental Study of Low Field Electron Mobility in Double-Gate, Ultra-Thin SOI MOSFETs 205
Characterization and modelling of differential sensitivity of nanoribbon-based pH-sensors 204
A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors 201
Real-time imaging of microparticles and living cells with CMOS nanocapacitor arrays 201
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 201
Derivation and Numerical Verification of a Compact Analytical Model for the AC Admittance Response of Nanoelectrodes, Suitable for the Analysis and Optimization of Impedance Biosensors 201
Effects of the interaction of neighboring structures on the Latch-up behavior of C-MOS ICs 199
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 199
Trade-offs between tunneling and Hot-Carrier Injection in short channel Floating Gate MOSFETs 196
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 196
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 195
Influence of δ p-doping on the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation 194
Monte Carlo Simulation of Substrate Enhanced Electron Injection in Split-gate Memory Cells 193
3D-FBK pixelsensors:Recent beam tests results with irradiated devices 193
A design methodology for MOS Current-Mode Logic Frequency Dividers 192
Semi-analytic Modeling for Hot Carriers in Electron Devices 191
High-Frequency Nanocapacitor Arrays: Concept, Recent Developments, and Outlook 191
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits 191
Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel 190
Simulation analysis of III-V n-MOSFETs: channel materials, Fermi level pinning and biaxial strain 190
Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits 188
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs 188
Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint 188
Models for the use of commercial TCAD in the analysis of silicon-based integrated biosensors 186
Total Ionizing Dose Effects in Si-Based Tunnel FETs 186
An in-depth investigation of physical mechanisms governing SANOS memories characteristics 185
On the origin of the mobility reduction in n- and p-metal-oxide-semiconductor field effect transistors with hafnium-based/metal gate stacks 183
On the Optimization of SiGe and III-V Compound Hetero-Junction Tunnel FET Devices 183
A Study of Injection Conditions in the Substrate Hot Electron Induced Degradation of n-MOSFETs 182
On the response of nanoelectrode capacitive biosensors to DNA and PNA strands 182
An improved procedure to extract the limiting carrier velocity in ultra scaled CMOS devices 182
Modeling and Simulation of Small CCMV Virus Detection by means of High Frequency Impedance Spectroscopy at Nanoelectrodes 182
Modeling, design and characterization of a new Low Jitter analog Dual Tuning LC-VCO PLL Architecture 181
Improved sensitivity of nanowire bio-FETs operated at high-frequency: a simulation study 181
Comparison of Semiclassical Transport Formulations Including Quantum Corrections for Advanced Devices with High-K Gate Stacks 181
A Model to Understand Current Consumption, Maximum Operating Frequency And Scaling Trends Of MCML Frequency Dividers 180
Gain and noise in GaAs/AlGaAs avalanche photodiodes with thin multiplication regions 180
A Monte Carlo Technique to Investigate Signal Delays of Advanced Si BJT's up to High Currents 180
Layout dependence of CMOS Latch-up 179
Design, characterization and signal integrity analysis of a 2.5 Gb/s high-speed serial interface for automotive applications overarching the chip/PCB wall 178
Effects of the interaction of neighboring structures on the Latch-up behavior of C-MOS ICs 178
A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance 178
On the Surface-Roughness Scattering in Biaxially Strained n- and p-MOS Transistors 177
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 177
Simulation of nano-biosensors based on conventional TCAD 176
Multi-Subband Monte-Carlo study of Transport, Quantization and Electron Gas Degeneration in Ultra-Thin SOI n-MOSFETs 176
On the Response of Nanoelectrode Impedance Spectroscopy Measures to Plant, Animal, and Human Viruses 176
"A Better Understanding of Substrate Enhanced Gate Current in VLSI MOSFET's and Flash Cells - Part II: Physical Analysis 175
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations 175
Study of defects in Al2O3 blocking layers of TANOS memories by atomistic simulation, electrical characterization and physico-chemical material analyses 174
The impact of interface states on the mobility and the drive current of III-V MOSFETs 174
A Comparative Study of Hot-Carrier Induced Light Emission and Degradation in Bulk and SOI MOSFETs 174
Efficient DC and AC simulation of nanoelectrode-nanoparticle interactions in capacitive biosensors 173
Simulation and automated characterisation of optimal load for flexible composite generators based on piezoelectric ZnO nanowires 173
On the experimental determination of channel back-scattering in nanoMOSFETs 172
Sensitivity of Silicon Nanowire Biochemical Sensors 172
A combined transport-injection model for hot-electron and hot-hole injection in the gate oxide of MOS structures 171
Toward computationally efficient Multi-Subband Monte Carlo simulations of nanoscale MOSFETs 171
Simulation of DC and RF Performance of the Graphene Base Transistor 170
On the Adequacy of the Transmission Line Model to Describe the Graphene-Metal Contact Resistance 170
Modeling of Field-Effect-Transistors with Strained and Alternative Channel Materials 170
Investigation of Hot Carrier Stress and Constant Voltage Stress in High-κ Si-Based TFETs 170
Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects 170
Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells 169
Analysis of Uniform Degradation in n-MOSFETs 168
Low-voltage high-performance III-V semiconductor MOSFETs for advanced CMOS nodes: impact of strain and interface traps 168
A new analytical model for the energy dispersion in two-dimensional hole inversion layers 167
Quasi-Ballistic Gamma - and L-Valleys Transport in Ultrathin Body Strained (111) GaAs nMOSFETs 167
A novel method to determine the Source and Drain resistances of individual MOSFETs 167
Non-local microscopic view of signal propagation times in BJTs biased up to high currents 166
Modeling approaches for band-structure calculation in III-V FET quantum wells 166
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits 166
Performance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications 166
Monitoring Hot Carrier Degradation in SOI MOSFETs by Hot Carrier Luminescence Techniques 165
Latch-up in CMOS circuits: a review 165
A simulation study of strain induced performance enhancements in InAs nanowire Tunnel-FETs 165
Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs 165
Multi-scale strategy for high-k/metal-gate UTBB-FDSOI devices modeling with emphasis on back bias impact on mobility 165
Modeling of End of the Roadmap nMOSFET with Alternative Channel Material 164
An improved empirical approach to introduce quantization effects in the transport direction in multi-subband Monte Carlo simulations 164
Characterization and Modeling of long term retention in SONOS Non Volatile Memories 163
Experimental Application of a Novel Technique to Extract Gate Bias Dependent Source and Drain Parasitic Resistances of GaAs MESFETs 162
The impact of longitudinal non-uniform Fin-thickness on quasi-ballistic transport in FinFETs 162
A technique to model the AC response of diffuse layers at electrode/electrolyte interfaces and to efficiently simulate impedimetric biosensor arrays for many analyte configurations 162
Totale 20.174
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Categoria #
all - tutte 192.749
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 192.749
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20223.114 165 277 115 125 40 193 233 121 31 567 769 478
2022/20233.260 424 374 48 432 261 851 10 197 402 30 87 144
2023/20241.216 154 85 30 30 152 256 32 68 131 41 16 221
2024/20258.397 1.462 638 422 209 191 321 406 368 746 715 957 1.962
2025/202612.293 761 1.347 1.143 1.516 2.085 973 1.357 362 804 1.054 620 271
2026/2027299 299 0 0 0 0 0 0 0 0 0 0 0
Totale 56.351