IRIS
ESSENI, David
 Distribuzione geografica
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Continente #
NA - Nord America 24.734
EU - Europa 5.268
AS - Asia 1.873
AF - Africa 27
Continente sconosciuto - Info sul continente non disponibili 14
SA - Sud America 7
OC - Oceania 1
Totale 31.924
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Nazione #
US - Stati Uniti d'America 24.614
UA - Ucraina 1.687
IT - Italia 1.148
DE - Germania 910
CN - Cina 891
SG - Singapore 655
FI - Finlandia 564
IE - Irlanda 334
SE - Svezia 257
TR - Turchia 168
CA - Canada 112
GB - Regno Unito 90
IN - India 63
FR - Francia 60
BE - Belgio 44
RU - Federazione Russa 33
AT - Austria 30
JP - Giappone 27
VN - Vietnam 27
CZ - Repubblica Ceca 18
CH - Svizzera 17
TG - Togo 17
NL - Olanda 14
EU - Europa 13
TW - Taiwan 12
PL - Polonia 9
ES - Italia 8
GR - Grecia 8
KR - Corea 8
BG - Bulgaria 6
IR - Iran 5
RO - Romania 5
MX - Messico 4
RS - Serbia 4
CL - Cile 3
HK - Hong Kong 3
HU - Ungheria 3
PE - Perù 3
PH - Filippine 3
ZA - Sudafrica 3
BD - Bangladesh 2
DK - Danimarca 2
DZ - Algeria 2
EE - Estonia 2
EG - Egitto 2
GE - Georgia 2
HR - Croazia 2
LI - Liechtenstein 2
MA - Marocco 2
MD - Moldavia 2
PA - Panama 2
SK - Slovacchia (Repubblica Slovacca) 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AL - Albania 1
AM - Armenia 1
AR - Argentina 1
AZ - Azerbaigian 1
BN - Brunei Darussalam 1
CM - Camerun 1
CR - Costa Rica 1
DO - Repubblica Dominicana 1
IS - Islanda 1
JO - Giordania 1
KZ - Kazakistan 1
LT - Lituania 1
LV - Lettonia 1
MK - Macedonia 1
NO - Norvegia 1
NZ - Nuova Zelanda 1
PK - Pakistan 1
PT - Portogallo 1
TH - Thailandia 1
Totale 31.924
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Città #
Woodbridge 3.528
Fairfield 3.227
Houston 2.106
Ann Arbor 2.067
Ashburn 1.502
Seattle 1.275
Chandler 1.262
Wilmington 1.200
Jacksonville 1.133
Cambridge 1.075
Dearborn 706
Singapore 552
Udine 513
Boardman 442
Beijing 397
Princeton 326
Dublin 316
Izmir 165
San Diego 156
Ottawa 90
Ogden 87
Hefei 78
Des Moines 75
Norwalk 68
New York 61
Nanjing 60
Grafing 51
Milan 45
Trieste 44
Munich 43
Kunming 42
Brussels 41
Santa Clara 40
Dallas 39
Helsinki 37
Simi Valley 32
Redmond 29
Palaiseau 28
Dong Ket 27
Guangzhou 27
Los Angeles 24
Codroipo 23
Indiana 23
Falls Church 22
Vienna 22
Cervignano Del Friuli 21
Jinan 21
Bologna 20
Nanchang 19
Arezzo 18
Rome 18
Lomé 17
Tokyo 17
Brno 16
Shanghai 16
Modena 14
Shenyang 14
Fuzhou 13
Pesaro 13
Chengdu 12
Pune 12
Toronto 12
Wuhan 12
Zhengzhou 12
Frankfurt am Main 9
Parma 9
Redwood City 9
Shenzhen 9
Changsha 8
Hebei 8
Hyderabad 8
Lappeenranta 8
Montreal 8
Paris 8
San Mateo 8
Xi'an 8
Zurich 8
Amsterdam 7
Andover 7
Chongqing 7
Hangzhou 7
Phoenix 7
Shaoxing 7
Cork 6
Leawood 6
Nuremberg 6
Scafati 6
Taipei 6
Torre Del Greco 6
Treviso 6
Edinburgh 5
London 5
Ningbo 5
Quzhou 5
Saint Petersburg 5
Sofia 5
Taizhou 5
Warsaw 5
Xian 5
Bangalore 4
Totale 23.644
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Nome #
Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells 1.630
Revised analysis of negative capacitance in ferroelectric-insulator capacitors: analytical and numerical results, physical insight, comparison to experiments 209
A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces 193
Improved surface roughness modeling and mobility projections in thin film MOSFETs 178
Design options for hetero-junction tunnel FETs with high on current and steep sub-threshold voltage slope 176
A New and Flexible Scheme for Hot-Electron Programming of Non-Volatile Memory Cells 171
Essential Physics of the OFF-State Current in Nanoscale MOSFETs and Tunnel FETs 169
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 167
Early assessment of tunnel-FET for energy-efficient logic circuits 163
A better understanding of the low-field mobility in Graphene Nano-ribbons 162
Mixed Tunnel-FET/MOSFET Level Shifters: A New Proposal to Extend the Tunnel-FET Application Domain 160
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits 160
Universal analytic model for tunnel FET circuit simulation 157
A review of selected topics in physics based modeling for tunnel field-effect transistors 157
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 155
An Experimental Study of Low Field Electron Mobility in Double-Gate, Ultra-Thin SOI MOSFETs 153
A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors 148
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits 148
Failure of the Scalar Dielectric Function Approach for the Screening Modeling in Double-Gate SOI MOSFETs and in FinFETs 147
Influence of interface traps on ferroelectric NC-FETs 146
Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel 144
Drain Current Improvements in Uniaxially Strained p-MOSFETs: a Multi-Subband Monte Carlo Study 144
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 144
New design perspective for Ferroelectric NC-FETs 143
Simulation analysis of III-V n-MOSFETs: channel materials, Fermi level pinning and biaxial strain 143
Electromechanical Piezoresistive Sensing in Suspended Graphene Membranes 142
Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits 141
Two-Dimensional Heterojunction Interlayer Tunneling Field Effect Transistors (Thin-TFETs) 138
"A Novel Method to Characterize Parasitic Capacitances in MOSFET's" 137
NEGF based transport modelling with a full-band, pseudopotential Hamiltonian: Theory, implementation and full device simulations 137
Simulations and comparisons of basic analog and digital circuit blocks employing Tunnel FETs and conventional FinFETs 136
Surface roughness limited mobility in multi-gate FETs with arbitrary cross-section 135
A New Model for the Backscatter Coefficient in Nanoscale MOSFETs 134
Pseudo-spectral methods for the efficient simulation of quantization effects in nanoscale MOS transistors 133
Revisiting piezoelectric FETs with sub-thermal swing 133
Models for the use of commercial TCAD in the analysis of silicon-based integrated biosensors 132
Full-Band Quantization Analysis Reveals a Third Valley in Silicon Inversion Layers 131
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs 131
"Hot-Carrier-Induced Alterations of MOSFET Capacitances: A Quantitative Monitor for Electrical Degradation" 131
"Characterization of Polysilicon-Gate Depletion in MOS Structures" 130
Experimental characterization of the vertical position of the trapped charge in Si nitride-based nonvolatile memory cells 130
A computational study of van der Waals tunnel transistors: fundamental aspects and design challenges 130
Electron transport in 2D crystal semiconductors and their device applications 130
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 130
Supersteep Retrograde Doping in Ferroelectric MOSFETs for sub-60mV/dec Subthreshold Swing 129
On the origin of the mobility reduction in n- and p-metal-oxide-semiconductor field effect transistors with hafnium-based/metal gate stacks 129
Simulation of nano-biosensors based on conventional TCAD 128
Piezoresistive Properties of Suspended Graphene Membranes under Uniaxial and Biaxial Strain in Nanoelectromechanical Pressure Sensors 128
The impact of interface states on the mobility and the drive current of III-V MOSFETs 128
Stabilization of negative capacitance in ferroelectric capacitors with and without a metal interlayer 128
Modeling approaches for band-structure calculation in III-V FET quantum wells 127
Experimental Characterization of Statistically Independent Defects in Gate Dielectrics - Part I: Description and Validation of the Model 127
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits 126
Revised Analysis of Design Options and Minimum Subthreshold Swing in Piezoelectric FinFETs 126
Impact of inelastic phonon scattering in the OFF state of Tunnel-field-effect transistors 126
Device-circuit co-design and comparison of ultra-low voltage Tunnel-FET and CMOS digital circuits 125
Quasi-Ballistic Gamma - and L-Valleys Transport in Ultrathin Body Strained (111) GaAs nMOSFETs 125
An exact solution of the linearized Boltzmann transport equation and its application to mobility calculations in graphene bilayers 125
Performance analysis of different SRAM cell topologies employing tunnel-FETs 125
Multi-scale strategy for high-k/metal-gate UTBB-FDSOI devices modeling with emphasis on back bias impact on mobility 124
Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects 124
Quantum simulation of a heterojunction inter-layer Tunnel FET based on 2-D gapped crystals 123
Basic Insight about the Strain Engineering of n-type FinFETS 123
Operation and Design of van der Waals Tunnel Transistors: A 3-D Quantum Transport Study 123
Modeling of Field-Effect-Transistors with Strained and Alternative Channel Materials 123
A simulation based study of NC-FETs design: Off-state versus on-state perspective 123
Extraction of h parameter characterising ueff against Eeff curves in strained Si nMOS devices 121
Technology Computer Aided Design 121
Improved surface-roughness scattering and mobility models for multi-gate FETs with arbitrary cross-section and biasing scheme 121
Low-voltage high-performance III-V semiconductor MOSFETs for advanced CMOS nodes: impact of strain and interface traps 121
Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells 120
Simulation of DC and RF Performance of the Graphene Base Transistor 119
On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors 119
Hot Hole Gate Current in Surface Channel p-MOSFETs 119
DFT study of graphene doping due to metal contacts 119
Toward computationally efficient Multi-Subband Monte Carlo simulations of nanoscale MOSFETs 118
An MoS 2 -Based Piezoelectric FET: A Computational Study of Material Properties and Device Design 118
Surface-Roughness-Induced Variability in Nanowire InAs Tunnel FETs 117
Revised Stability Analysis of the Nonlinear Poisson Scheme in Self-Consistent Monte Carlo Device Simulations 117
Multi-Subband Monte-Carlo study of Transport, Quantization and Electron Gas Degeneration in Ultra-Thin SOI n-MOSFETs 117
Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs 117
A new Statistical Model to extract the Stress Induced Oxide Trap number and the Probability Density Distribution of the Gate Current Produced by a Single Trap 116
Inverters With Strained Si Nanowire Complementary Tunnel Field-Effect Transistors 116
Discrete Geometric Approach for Modelling Quantization Effects in Nanoscale Electron Devices 116
An improved procedure to extract the limiting carrier velocity in ultra scaled CMOS devices 116
Impact of electron velocity on the ION of n-TFETs 115
Continuous Semiempirical Model for the CurrentVoltage Characteristics of Tunnel FETs 115
Quantum simulation of a heterojunction vertical tunnel FET based on 2D transition metal dichalcogenides 115
Digital and analog TFET circuits: Design and benchmark 115
Improved understanding of metal–graphene contacts 115
A new analytical model for the energy dispersion in two-dimensional hole inversion layers 114
Transport models based on NEGF and empirical pseudopotentials: A computationally viable method for self-consistent simulation of nanoscale devices 114
On the experimental determination of channel back-scattering in nanoMOSFETs 113
Ultra Thin SOI Transistors for Ultimate CMOS Technology: Fundamental Properties and Application Perspectives 112
Explanation of SILC probability density distributions with nonuniform generation of traps in the tunnel oxide of flash memory arrays 112
Drain current improvements in uniaxially strained p-MOSFETs: A Multi-Subband Monte Carlo study 112
Modeling and Simulation Approaches for Drain Current Computation 111
3D-FBK pixelsensors:Recent beam tests results with irradiated devices 111
A Quantitative Error Analysis of the Mobility Extraction According to the Matthiessen Rule in Advanced MOS Transistors 111
Mobility Enhancement in Strained n-FinFETs: Basic Insight and Stress Engineering 111
Totale 14.717
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Categoria #
all - tutte 103.262
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 103.262
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20206.266 0 0 0 0 674 1.297 1.008 1.032 808 682 245 520
2020/20214.489 125 528 286 583 241 533 261 435 591 199 481 226
2021/20222.779 159 229 102 147 41 179 208 122 39 497 645 411
2022/20232.920 362 293 53 402 217 745 9 205 356 38 102 138
2023/20241.155 146 78 77 29 141 112 70 91 134 63 29 185
2024/20252.782 1.478 605 377 151 171 0 0 0 0 0 0 0
Totale 32.470