IRIS
ESSENI, David
 Distribuzione geografica
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Continente #
NA - Nord America 30.653
AS - Asia 10.419
EU - Europa 7.857
SA - Sud America 1.963
Continente sconosciuto - Info sul continente non disponibili 680
AF - Africa 274
OC - Oceania 6
AN - Antartide 1
Totale 51.853
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Nazione #
US - Stati Uniti d'America 30.211
SG - Singapore 4.995
CN - Cina 2.167
IT - Italia 1.752
UA - Ucraina 1.721
BR - Brasile 1.509
DE - Germania 1.232
HK - Hong Kong 1.039
VN - Vietnam 834
FI - Finlandia 660
RU - Federazione Russa 581
FR - Francia 489
IE - Irlanda 351
SE - Svezia 292
IN - India 259
CA - Canada 250
GB - Regno Unito 230
TR - Turchia 229
AR - Argentina 151
BD - Bangladesh 151
KR - Corea 116
NL - Olanda 98
MX - Messico 94
AT - Austria 91
IQ - Iraq 89
ZA - Sudafrica 83
JP - Giappone 80
EC - Ecuador 72
CO - Colombia 66
PL - Polonia 66
ID - Indonesia 59
ES - Italia 55
PK - Pakistan 53
BE - Belgio 51
VE - Venezuela 51
PH - Filippine 45
MA - Marocco 41
SA - Arabia Saudita 41
CL - Cile 36
CH - Svizzera 33
UZ - Uzbekistan 31
TW - Taiwan 28
PY - Paraguay 27
TN - Tunisia 27
MY - Malesia 26
LT - Lituania 25
KE - Kenya 24
JO - Giordania 23
CZ - Repubblica Ceca 21
JM - Giamaica 20
BO - Bolivia 19
TG - Togo 19
UY - Uruguay 15
DO - Repubblica Dominicana 14
DZ - Algeria 14
EG - Egitto 14
GR - Grecia 14
PE - Perù 14
AZ - Azerbaigian 13
EU - Europa 13
AE - Emirati Arabi Uniti 12
CR - Costa Rica 11
IL - Israele 11
KZ - Kazakistan 11
OM - Oman 11
BG - Bulgaria 10
NP - Nepal 10
PS - Palestinian Territory 10
RO - Romania 10
TH - Thailandia 10
AL - Albania 9
CI - Costa d'Avorio 9
RS - Serbia 9
GE - Georgia 8
HN - Honduras 8
IR - Iran 8
MD - Moldavia 8
TT - Trinidad e Tobago 8
AO - Angola 7
DK - Danimarca 7
HU - Ungheria 7
PA - Panama 7
AM - Armenia 6
KG - Kirghizistan 6
LB - Libano 6
PR - Porto Rico 6
PT - Portogallo 6
XK - ???statistics.table.value.countryCode.XK??? 6
BH - Bahrain 5
HR - Croazia 5
LV - Lettonia 5
NI - Nicaragua 5
SN - Senegal 5
CG - Congo 4
ET - Etiopia 4
GT - Guatemala 4
LK - Sri Lanka 4
NO - Norvegia 4
SK - Slovacchia (Repubblica Slovacca) 4
SY - Repubblica araba siriana 4
Totale 51.114
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Città #
Woodbridge 3.529
Fairfield 3.229
Ashburn 2.411
Houston 2.135
Ann Arbor 2.068
Singapore 1.923
Seattle 1.294
Chandler 1.260
Wilmington 1.202
Jacksonville 1.141
Cambridge 1.078
Beijing 1.055
Hong Kong 1.028
San Jose 847
Dearborn 706
Udine 573
Council Bluffs 510
Boardman 479
Dublin 330
Princeton 326
Lauterbourg 322
Los Angeles 321
Ho Chi Minh City 247
Buffalo 207
Dallas 201
Santa Clara 201
Munich 196
Hanoi 180
Izmir 170
Hefei 166
New York 164
Milan 162
San Diego 161
São Paulo 135
Helsinki 109
Redondo Beach 109
Seoul 98
The Dalles 95
Ottawa 92
Ogden 86
Des Moines 82
Norwalk 69
Orem 68
Tokyo 64
Frankfurt am Main 62
East Aurora 61
Nanjing 61
Atlanta 59
Düsseldorf 58
Vienna 52
Warsaw 52
Chicago 51
Grafing 51
Trieste 51
Rio de Janeiro 49
Phoenix 47
Brooklyn 46
Brussels 46
Amsterdam 45
Mumbai 44
Kunming 43
Montreal 43
Chennai 41
Johannesburg 41
Nuremberg 40
Bologna 39
Denver 39
Da Nang 38
Haiphong 36
Stockholm 35
Miano 34
Modena 34
Guangzhou 33
Simi Valley 33
San Francisco 31
Belo Horizonte 30
Boston 30
London 30
Rome 30
Dhaka 29
Poplar 29
Redmond 29
Shanghai 29
Toronto 29
Palaiseau 28
Baghdad 27
Brasília 27
Dong Ket 27
Mexico City 25
Guayaquil 24
Tashkent 24
Codroipo 23
Indiana 23
Nairobi 23
San Michele al Tagliamento 23
Falls Church 22
Miami 22
New Delhi 22
Newark 22
Biên Hòa 21
Totale 32.872
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Nome #
Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells 1.674
A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces 280
Revised analysis of negative capacitance in ferroelectric-insulator capacitors: analytical and numerical results, physical insight, comparison to experiments 256
Stabilization of negative capacitance in ferroelectric capacitors with and without a metal interlayer 244
Improved surface roughness modeling and mobility projections in thin film MOSFETs 243
A better understanding of the low-field mobility in Graphene Nano-ribbons 234
A New and Flexible Scheme for Hot-Electron Programming of Non-Volatile Memory Cells 229
A review of selected topics in physics based modeling for tunnel field-effect transistors 228
Essential Physics of the OFF-State Current in Nanoscale MOSFETs and Tunnel FETs 221
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 218
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits 218
Mixed Tunnel-FET/MOSFET Level Shifters: A New Proposal to Extend the Tunnel-FET Application Domain 215
A computational study of van der Waals tunnel transistors: fundamental aspects and design challenges 212
Scaled vertical-nanowire heterojunction tunnelling transistors with extreme quantum confinement 211
Design options for hetero-junction tunnel FETs with high on current and steep sub-threshold voltage slope 210
An Experimental Study of Low Field Electron Mobility in Double-Gate, Ultra-Thin SOI MOSFETs 208
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 206
Electromechanical Piezoresistive Sensing in Suspended Graphene Membranes 204
Drain Current Improvements in Uniaxially Strained p-MOSFETs: a Multi-Subband Monte Carlo Study 204
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 204
A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors 203
Early assessment of tunnel-FET for energy-efficient logic circuits 203
Basic Insight about the Strain Engineering of n-type FinFETS 200
Failure of the Scalar Dielectric Function Approach for the Screening Modeling in Double-Gate SOI MOSFETs and in FinFETs 200
A New Model for the Backscatter Coefficient in Nanoscale MOSFETs 199
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 199
3D-FBK pixelsensors:Recent beam tests results with irradiated devices 197
New design perspective for Ferroelectric NC-FETs 197
DFT study of graphene doping due to metal contacts 195
Simulation analysis of III-V n-MOSFETs: channel materials, Fermi level pinning and biaxial strain 195
"A Novel Method to Characterize Parasitic Capacitances in MOSFET's" 194
Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel 194
An exact solution of the linearized Boltzmann transport equation and its application to mobility calculations in graphene bilayers 194
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs 194
Comparison between Pseudospectral and Discrete Geometric Methods for Modelling Quantization Effects in Nanoscale Electron Devices 193
Universal analytic model for tunnel FET circuit simulation 192
Influence of interface traps on ferroelectric NC-FETs 192
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits 192
Discrete Geometric Approach for Modelling Quantization Effects in Nanoscale Electron Devices 191
Experimental characterization of the vertical position of the trapped charge in Si nitride-based nonvolatile memory cells 191
"Characterization of Polysilicon-Gate Depletion in MOS Structures" 190
Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits 190
Models for the use of commercial TCAD in the analysis of silicon-based integrated biosensors 189
Supersteep Retrograde Doping in Ferroelectric MOSFETs for sub-60mV/dec Subthreshold Swing 189
Surface roughness limited mobility in multi-gate FETs with arbitrary cross-section 189
Simulations and comparisons of basic analog and digital circuit blocks employing Tunnel FETs and conventional FinFETs 188
Revisiting piezoelectric FETs with sub-thermal swing 187
"Hot-Carrier-Induced Alterations of MOSFET Capacitances: A Quantitative Monitor for Electrical Degradation" 187
On the origin of the mobility reduction in n- and p-metal-oxide-semiconductor field effect transistors with hafnium-based/metal gate stacks 186
Full-Band Quantization Analysis Reveals a Third Valley in Silicon Inversion Layers 185
Pseudo-spectral methods for the efficient simulation of quantization effects in nanoscale MOS transistors 185
Two-Dimensional Heterojunction Interlayer Tunneling Field Effect Transistors (Thin-TFETs) 185
An improved procedure to extract the limiting carrier velocity in ultra scaled CMOS devices 184
NEGF based transport modelling with a full-band, pseudopotential Hamiltonian: Theory, implementation and full device simulations 184
A Quantitative Error Analysis of the Mobility Extraction According to the Matthiessen Rule in Advanced MOS Transistors 183
Improved understanding of metal–graphene contacts 183
Comparison of Semiclassical Transport Formulations Including Quantum Corrections for Advanced Devices with High-K Gate Stacks 183
On the Surface-Roughness Scattering in Biaxially Strained n- and p-MOS Transistors 182
"A Better Understanding of Substrate Enhanced Gate Current in VLSI MOSFET's and Flash Cells - Part II: Physical Analysis 180
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 180
Piezoresistive Properties of Suspended Graphene Membranes under Uniaxial and Biaxial Strain in Nanoelectromechanical Pressure Sensors 180
The impact of interface states on the mobility and the drive current of III-V MOSFETs 180
Multi-Subband Monte-Carlo study of Transport, Quantization and Electron Gas Degeneration in Ultra-Thin SOI n-MOSFETs 179
Mobility Enhancement in Strained n-FinFETs: Basic Insight and Stress Engineering 179
Simulation of nano-biosensors based on conventional TCAD 178
On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors 178
Surface-Roughness-Induced Variability in Nanowire InAs Tunnel FETs 177
Toward computationally efficient Multi-Subband Monte Carlo simulations of nanoscale MOSFETs 176
Low-voltage high-performance III-V semiconductor MOSFETs for advanced CMOS nodes: impact of strain and interface traps 176
Device-circuit co-design and comparison of ultra-low voltage Tunnel-FET and CMOS digital circuits 175
Improved surface-roughness scattering and mobility models for multi-gate FETs with arbitrary cross-section and biasing scheme 175
Simulation of DC and RF Performance of the Graphene Base Transistor 174
Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells 173
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits 173
Revised Analysis of Design Options and Minimum Subthreshold Swing in Piezoelectric FinFETs 173
Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating 173
On the experimental determination of channel back-scattering in nanoMOSFETs 172
Performance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications 172
Modeling of Field-Effect-Transistors with Strained and Alternative Channel Materials 172
Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects 172
A new analytical model for the energy dispersion in two-dimensional hole inversion layers 171
Quasi-Ballistic Gamma - and L-Valleys Transport in Ultrathin Body Strained (111) GaAs nMOSFETs 171
Extraction of h parameter characterising ueff against Eeff curves in strained Si nMOS devices 170
A simulation study of strain induced performance enhancements in InAs nanowire Tunnel-FETs 169
Modeling approaches for band-structure calculation in III-V FET quantum wells 169
Characterization and Modeling of long term retention in SONOS Non Volatile Memories 168
Multi-scale strategy for high-k/metal-gate UTBB-FDSOI devices modeling with emphasis on back bias impact on mobility 168
Modeling and Simulation Approaches for Drain Current Computation 167
Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs 167
Strain-Induced Modulation of Electron Mobility in Single-Layer Transition Metal Dichalcogenides MX2 (M = Mo, W; X = S, Se) 167
Drain current improvements in uniaxially strained p-MOSFETs: A Multi-Subband Monte Carlo study 167
Performance analysis of different SRAM cell topologies employing tunnel-FETs 167
Theory of Motion at the band crossing points in bulk semiconductor crystals and in inversion layers 166
An improved empirical approach to introduce quantization effects in the transport direction in multi-subband Monte Carlo simulations 166
Explanation of SILC probability density distributions with nonuniform generation of traps in the tunnel oxide of flash memory arrays 166
Technology Computer Aided Design 164
Investigation of Strain Engineering in FinFETs Comprising Experimental Analysis and Numerical Simulations 164
Interpretation of graphene mobility data by means of a semiclassical Monte Carlo transport model 164
A new Statistical Model to extract the Stress Induced Oxide Trap number and the Probability Density Distribution of the Gate Current Produced by a Single Trap 163
Revised Stability Analysis of the Nonlinear Poisson Scheme in Self-Consistent Monte Carlo Device Simulations 163
Totale 20.387
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Categoria #
all - tutte 183.925
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 183.925
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20222.391 0 0 102 147 41 179 208 122 39 497 645 411
2022/20232.915 362 291 53 401 217 744 9 205 356 38 102 137
2023/20241.141 143 78 77 29 140 107 70 91 133 60 29 184
2024/20258.183 1.477 604 375 149 202 389 498 433 694 632 915 1.815
2025/202612.413 840 1.396 1.135 1.390 2.061 923 1.372 387 860 1.002 675 372
2026/20271.588 282 891 415 0 0 0 0 0 0 0 0 0
Totale 51.853