IRIS
ESSENI, David
 Distribuzione geografica
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Continente #
NA - Nord America 22.638
EU - Europa 5.100
AS - Asia 1.141
AF - Africa 24
Continente sconosciuto - Info sul continente non disponibili 14
SA - Sud America 4
OC - Oceania 1
Totale 28.922
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Nazione #
US - Stati Uniti d'America 22.521
UA - Ucraina 1.687
IT - Italia 1.086
DE - Germania 869
CN - Cina 831
FI - Finlandia 547
IE - Irlanda 334
SE - Svezia 257
TR - Turchia 168
CA - Canada 112
GB - Regno Unito 89
FR - Francia 56
IN - India 55
BE - Belgio 44
RU - Federazione Russa 32
VN - Vietnam 27
AT - Austria 25
JP - Giappone 25
TG - Togo 17
CH - Svizzera 14
EU - Europa 13
TW - Taiwan 11
NL - Olanda 9
GR - Grecia 8
KR - Corea 8
PL - Polonia 8
ES - Italia 6
BG - Bulgaria 5
RO - Romania 5
IR - Iran 4
MX - Messico 4
CL - Cile 3
HU - Ungheria 3
PH - Filippine 3
RS - Serbia 3
SG - Singapore 3
ZA - Sudafrica 3
BD - Bangladesh 2
DZ - Algeria 2
EE - Estonia 2
HK - Hong Kong 2
LI - Liechtenstein 2
MD - Moldavia 2
A2 - ???statistics.table.value.countryCode.A2??? 1
BN - Brunei Darussalam 1
CM - Camerun 1
CR - Costa Rica 1
CZ - Repubblica Ceca 1
DK - Danimarca 1
EG - Egitto 1
HR - Croazia 1
MK - Macedonia 1
NO - Norvegia 1
NZ - Nuova Zelanda 1
PE - Perù 1
PT - Portogallo 1
SK - Slovacchia (Repubblica Slovacca) 1
TH - Thailandia 1
Totale 28.922
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Città #
Woodbridge 3.528
Fairfield 3.227
Houston 2.106
Ann Arbor 2.067
Ashburn 1.501
Seattle 1.275
Chandler 1.262
Wilmington 1.200
Jacksonville 1.133
Cambridge 1.074
Dearborn 706
Udine 496
Beijing 393
Princeton 326
Dublin 316
Izmir 165
San Diego 156
Ottawa 90
Ogden 87
Hefei 78
Des Moines 75
Norwalk 68
New York 61
Nanjing 58
Boardman 57
Grafing 51
Trieste 43
Kunming 42
Milan 42
Brussels 41
Simi Valley 32
Redmond 29
Palaiseau 28
Dong Ket 27
Helsinki 26
Guangzhou 24
Indiana 23
Falls Church 22
Cervignano Del Friuli 21
Jinan 21
Bologna 20
Nanchang 19
Vienna 19
Lomé 17
Munich 17
Tokyo 17
Codroipo 16
Rome 16
Modena 14
Shenyang 14
Pesaro 13
Chengdu 12
Pune 12
Toronto 12
Zhengzhou 12
Arezzo 11
Fuzhou 11
Wuhan 10
Redwood City 9
Changsha 8
Hebei 8
Montreal 8
San Mateo 8
Andover 7
Chongqing 7
Hangzhou 7
Phoenix 7
Shanghai 7
Shaoxing 7
Cork 6
Dallas 6
Leawood 6
Paris 6
Parma 6
Scafati 6
Taipei 6
Torre Del Greco 6
Treviso 6
Edinburgh 5
Frankfurt am Main 5
London 5
Ningbo 5
Quzhou 5
Saint Petersburg 5
Warsaw 5
Xian 5
Zurich 5
Bangalore 4
Baotou 4
Castelfranco Veneto 4
Catania 4
Jiaxing 4
Mcallen 4
Mumbai 4
Nürnberg 4
Osaka 4
Shenzhen 4
Sofia 4
Amsterdam 3
Augusta 3
Totale 22.471
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Nome #
Revised analysis of negative capacitance in ferroelectric-insulator capacitors: analytical and numerical results, physical insight, comparison to experiments 202
A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces 184
Design options for hetero-junction tunnel FETs with high on current and steep sub-threshold voltage slope 172
Improved surface roughness modeling and mobility projections in thin film MOSFETs 171
A New and Flexible Scheme for Hot-Electron Programming of Non-Volatile Memory Cells 165
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 163
Essential Physics of the OFF-State Current in Nanoscale MOSFETs and Tunnel FETs 162
Early assessment of tunnel-FET for energy-efficient logic circuits 159
A better understanding of the low-field mobility in Graphene Nano-ribbons 156
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits 156
Mixed Tunnel-FET/MOSFET Level Shifters: A New Proposal to Extend the Tunnel-FET Application Domain 155
Universal analytic model for tunnel FET circuit simulation 151
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 151
A review of selected topics in physics based modeling for tunnel field-effect transistors 151
An Experimental Study of Low Field Electron Mobility in Double-Gate, Ultra-Thin SOI MOSFETs 149
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits 145
Failure of the Scalar Dielectric Function Approach for the Screening Modeling in Double-Gate SOI MOSFETs and in FinFETs 143
A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors 140
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 140
Drain Current Improvements in Uniaxially Strained p-MOSFETs: a Multi-Subband Monte Carlo Study 139
Electromechanical Piezoresistive Sensing in Suspended Graphene Membranes 138
Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel 138
Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells 138
Influence of interface traps on ferroelectric NC-FETs 138
Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits 137
Simulation analysis of III-V n-MOSFETs: channel materials, Fermi level pinning and biaxial strain 137
New design perspective for Ferroelectric NC-FETs 134
"A Novel Method to Characterize Parasitic Capacitances in MOSFET's" 133
Two-Dimensional Heterojunction Interlayer Tunneling Field Effect Transistors (Thin-TFETs) 133
Simulations and comparisons of basic analog and digital circuit blocks employing Tunnel FETs and conventional FinFETs 133
NEGF based transport modelling with a full-band, pseudopotential Hamiltonian: Theory, implementation and full device simulations 132
Surface roughness limited mobility in multi-gate FETs with arbitrary cross-section 130
Revisiting piezoelectric FETs with sub-thermal swing 130
Full-Band Quantization Analysis Reveals a Third Valley in Silicon Inversion Layers 129
Pseudo-spectral methods for the efficient simulation of quantization effects in nanoscale MOS transistors 128
A New Model for the Backscatter Coefficient in Nanoscale MOSFETs 128
Electron transport in 2D crystal semiconductors and their device applications 127
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs 127
"Hot-Carrier-Induced Alterations of MOSFET Capacitances: A Quantitative Monitor for Electrical Degradation" 127
"Characterization of Polysilicon-Gate Depletion in MOS Structures" 125
Models for the use of commercial TCAD in the analysis of silicon-based integrated biosensors 125
Experimental characterization of the vertical position of the trapped charge in Si nitride-based nonvolatile memory cells 124
Piezoresistive Properties of Suspended Graphene Membranes under Uniaxial and Biaxial Strain in Nanoelectromechanical Pressure Sensors 124
The impact of interface states on the mobility and the drive current of III-V MOSFETs 124
Revised Analysis of Design Options and Minimum Subthreshold Swing in Piezoelectric FinFETs 124
On the origin of the mobility reduction in n- and p-metal-oxide-semiconductor field effect transistors with hafnium-based/metal gate stacks 124
Performance analysis of different SRAM cell topologies employing tunnel-FETs 124
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 124
Modeling approaches for band-structure calculation in III-V FET quantum wells 123
A computational study of van der Waals tunnel transistors: fundamental aspects and design challenges 123
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits 123
Experimental Characterization of Statistically Independent Defects in Gate Dielectrics - Part I: Description and Validation of the Model 123
Impact of inelastic phonon scattering in the OFF state of Tunnel-field-effect transistors 123
Simulation of nano-biosensors based on conventional TCAD 122
Supersteep Retrograde Doping in Ferroelectric MOSFETs for sub-60mV/dec Subthreshold Swing 122
Multi-scale strategy for high-k/metal-gate UTBB-FDSOI devices modeling with emphasis on back bias impact on mobility 122
Device-circuit co-design and comparison of ultra-low voltage Tunnel-FET and CMOS digital circuits 121
Quasi-Ballistic Gamma - and L-Valleys Transport in Ultrathin Body Strained (111) GaAs nMOSFETs 121
Quantum simulation of a heterojunction inter-layer Tunnel FET based on 2-D gapped crystals 120
Technology Computer Aided Design 120
Basic Insight about the Strain Engineering of n-type FinFETS 119
An exact solution of the linearized Boltzmann transport equation and its application to mobility calculations in graphene bilayers 119
Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects 119
Operation and Design of van der Waals Tunnel Transistors: A 3-D Quantum Transport Study 118
Modeling of Field-Effect-Transistors with Strained and Alternative Channel Materials 118
Stabilization of negative capacitance in ferroelectric capacitors with and without a metal interlayer 118
Extraction of h parameter characterising ueff against Eeff curves in strained Si nMOS devices 117
Multi-Subband Monte-Carlo study of Transport, Quantization and Electron Gas Degeneration in Ultra-Thin SOI n-MOSFETs 116
Simulation of DC and RF Performance of the Graphene Base Transistor 116
An MoS 2 -Based Piezoelectric FET: A Computational Study of Material Properties and Device Design 116
Low-voltage high-performance III-V semiconductor MOSFETs for advanced CMOS nodes: impact of strain and interface traps 116
Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells 115
Revised Stability Analysis of the Nonlinear Poisson Scheme in Self-Consistent Monte Carlo Device Simulations 115
Improved surface-roughness scattering and mobility models for multi-gate FETs with arbitrary cross-section and biasing scheme 115
On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors 115
Hot Hole Gate Current in Surface Channel p-MOSFETs 115
Inverters With Strained Si Nanowire Complementary Tunnel Field-Effect Transistors 113
Impact of electron velocity on the ION of n-TFETs 113
Toward computationally efficient Multi-Subband Monte Carlo simulations of nanoscale MOSFETs 113
Continuous Semiempirical Model for the CurrentVoltage Characteristics of Tunnel FETs 113
Digital and analog TFET circuits: Design and benchmark 113
DFT study of graphene doping due to metal contacts 113
A simulation based study of NC-FETs design: Off-state versus on-state perspective 113
Surface-Roughness-Induced Variability in Nanowire InAs Tunnel FETs 112
Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs 112
On the experimental determination of channel back-scattering in nanoMOSFETs 111
Quantum simulation of a heterojunction vertical tunnel FET based on 2D transition metal dichalcogenides 111
Ultra Thin SOI Transistors for Ultimate CMOS Technology: Fundamental Properties and Application Perspectives 110
A new Statistical Model to extract the Stress Induced Oxide Trap number and the Probability Density Distribution of the Gate Current Produced by a Single Trap 110
Discrete Geometric Approach for Modelling Quantization Effects in Nanoscale Electron Devices 110
An improved procedure to extract the limiting carrier velocity in ultra scaled CMOS devices 110
Transport models based on NEGF and empirical pseudopotentials: A computationally viable method for self-consistent simulation of nanoscale devices 109
Modeling and Simulation Approaches for Drain Current Computation 108
Improved understanding of metal–graphene contacts 108
A Quantitative Error Analysis of the Mobility Extraction According to the Matthiessen Rule in Advanced MOS Transistors 107
Mobility Enhancement in Strained n-FinFETs: Basic Insight and Stress Engineering 107
Drain current improvements in uniaxially strained p-MOSFETs: A Multi-Subband Monte Carlo study 107
Experimental Study of Low Voltage Anode Hole Injection in Thin Oxides 107
Investigation of the transport properties of silicon nanowires using deterministic and Monte Carlo approaches to the solution of the Boltzmann Transport Equation 106
A new analytical model for the energy dispersion in two-dimensional hole inversion layers 106
Totale 12.761
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Categoria #
all - tutte 78.462
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 78.462
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/20192.672 0 0 0 0 0 0 0 0 0 502 1.250 920
2019/20208.870 502 430 328 1.344 674 1.297 1.008 1.032 808 682 245 520
2020/20214.489 125 528 286 583 241 533 261 435 591 199 481 226
2021/20222.779 159 229 102 147 41 179 208 122 39 497 645 411
2022/20232.920 362 293 53 402 217 745 9 205 356 38 102 138
2023/2024919 146 78 77 29 141 112 70 91 134 41 0 0
Totale 29.452