IRIS
ESSENI, David
 Distribuzione geografica
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Continente #
NA - Nord America 25.170
EU - Europa 6.366
AS - Asia 3.295
SA - Sud America 456
AF - Africa 73
Continente sconosciuto - Info sul continente non disponibili 14
OC - Oceania 3
Totale 35.377
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Nazione #
US - Stati Uniti d'America 25.017
SG - Singapore 1.806
UA - Ucraina 1.694
IT - Italia 1.264
DE - Germania 1.116
CN - Cina 923
FI - Finlandia 614
RU - Federazione Russa 539
BR - Brasile 412
IE - Irlanda 339
SE - Svezia 265
TR - Turchia 179
CA - Canada 123
GB - Regno Unito 117
FR - Francia 115
KR - Corea 102
IN - India 76
AT - Austria 55
NL - Olanda 51
BE - Belgio 46
VN - Vietnam 30
JP - Giappone 28
CH - Svizzera 26
HK - Hong Kong 24
CZ - Repubblica Ceca 21
ZA - Sudafrica 21
PL - Polonia 20
BD - Bangladesh 18
TG - Togo 17
MX - Messico 15
EU - Europa 13
AR - Argentina 12
ES - Italia 12
GR - Grecia 12
MA - Marocco 12
TW - Taiwan 12
IQ - Iraq 9
PH - Filippine 9
UZ - Uzbekistan 8
AZ - Azerbaigian 7
BG - Bulgaria 7
PK - Pakistan 7
CO - Colombia 6
EC - Ecuador 6
KG - Kirghizistan 6
PE - Perù 6
AM - Armenia 5
BO - Bolivia 5
DK - Danimarca 5
GE - Georgia 5
IL - Israele 5
IR - Iran 5
KE - Kenya 5
MD - Moldavia 5
PA - Panama 5
RO - Romania 5
RS - Serbia 5
CI - Costa d'Avorio 4
CR - Costa Rica 4
HU - Ungheria 4
JO - Giordania 4
KZ - Kazakistan 4
NO - Norvegia 4
PT - Portogallo 4
SK - Slovacchia (Repubblica Slovacca) 4
VE - Venezuela 4
AE - Emirati Arabi Uniti 3
AL - Albania 3
BN - Brunei Darussalam 3
CL - Cile 3
DZ - Algeria 3
EG - Egitto 3
JM - Giamaica 3
LK - Sri Lanka 3
LT - Lituania 3
NZ - Nuova Zelanda 3
OM - Oman 3
TN - Tunisia 3
EE - Estonia 2
HR - Croazia 2
LA - Repubblica Popolare Democratica del Laos 2
LI - Liechtenstein 2
LV - Lettonia 2
NP - Nepal 2
TH - Thailandia 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AO - Angola 1
BH - Bahrain 1
BW - Botswana 1
CM - Camerun 1
DO - Repubblica Dominicana 1
GT - Guatemala 1
IS - Islanda 1
LB - Libano 1
LU - Lussemburgo 1
MK - Macedonia 1
MY - Malesia 1
NG - Nigeria 1
NI - Nicaragua 1
PY - Paraguay 1
Totale 35.373
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Città #
Woodbridge 3.528
Fairfield 3.227
Houston 2.107
Ann Arbor 2.067
Ashburn 1.513
Seattle 1.278
Chandler 1.262
Wilmington 1.200
Jacksonville 1.133
Cambridge 1.077
Singapore 1.024
Dearborn 706
Udine 524
Boardman 442
Beijing 397
Princeton 326
Dublin 321
Izmir 165
San Diego 156
Munich 147
Seoul 94
Ottawa 91
Ogden 87
Hefei 78
Helsinki 78
Des Moines 75
New York 70
Norwalk 68
Milan 61
Los Angeles 60
Nanjing 60
Düsseldorf 51
Grafing 51
Santa Clara 48
Trieste 46
Brussels 43
Kunming 42
Dallas 40
Vienna 34
Frankfurt am Main 33
Simi Valley 32
Redmond 29
Palaiseau 28
Bologna 27
Dong Ket 27
Guangzhou 27
Nuremberg 27
São Paulo 24
Codroipo 23
Indiana 23
San Michele al Tagliamento 23
Falls Church 22
Hong Kong 22
Cervignano Del Friuli 21
Jinan 21
Nanchang 19
Rome 19
San Francisco 19
Arezzo 18
Shanghai 18
Tokyo 18
Amsterdam 17
Belluno 17
Lomé 17
Brno 16
Portsmouth 16
Belo Horizonte 15
Brooklyn 15
Warsaw 15
Modena 14
Shenyang 14
Fuzhou 13
Pesaro 13
Toronto 13
Chengdu 12
Lauterbourg 12
Pune 12
Rio de Janeiro 12
Wuhan 12
Zhengzhou 12
Zurich 12
Chicago 11
Montreal 11
London 10
Phoenix 10
Brasília 9
Chennai 9
Johannesburg 9
Lappeenranta 9
Moscow 9
Parma 9
Redwood City 9
Shenzhen 9
Stockholm 9
Xi'an 9
Boston 8
Changsha 8
Curitiba 8
Hebei 8
Hyderabad 8
Totale 24.748
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Nome #
Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells 1.634
Revised analysis of negative capacitance in ferroelectric-insulator capacitors: analytical and numerical results, physical insight, comparison to experiments 221
A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces 201
Improved surface roughness modeling and mobility projections in thin film MOSFETs 191
Design options for hetero-junction tunnel FETs with high on current and steep sub-threshold voltage slope 185
A New and Flexible Scheme for Hot-Electron Programming of Non-Volatile Memory Cells 183
Essential Physics of the OFF-State Current in Nanoscale MOSFETs and Tunnel FETs 181
A better understanding of the low-field mobility in Graphene Nano-ribbons 180
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits 179
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 177
Early assessment of tunnel-FET for energy-efficient logic circuits 169
Scaled vertical-nanowire heterojunction tunnelling transistors with extreme quantum confinement 168
An Experimental Study of Low Field Electron Mobility in Double-Gate, Ultra-Thin SOI MOSFETs 166
Mixed Tunnel-FET/MOSFET Level Shifters: A New Proposal to Extend the Tunnel-FET Application Domain 165
A review of selected topics in physics based modeling for tunnel field-effect transistors 164
Universal analytic model for tunnel FET circuit simulation 163
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 163
Stabilization of negative capacitance in ferroelectric capacitors with and without a metal interlayer 162
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 158
Influence of interface traps on ferroelectric NC-FETs 157
New design perspective for Ferroelectric NC-FETs 156
A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors 155
Drain Current Improvements in Uniaxially Strained p-MOSFETs: a Multi-Subband Monte Carlo Study 154
Failure of the Scalar Dielectric Function Approach for the Screening Modeling in Double-Gate SOI MOSFETs and in FinFETs 154
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits 154
Electromechanical Piezoresistive Sensing in Suspended Graphene Membranes 153
Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel 153
Simulation analysis of III-V n-MOSFETs: channel materials, Fermi level pinning and biaxial strain 150
"A Novel Method to Characterize Parasitic Capacitances in MOSFET's" 148
Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits 147
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 147
NEGF based transport modelling with a full-band, pseudopotential Hamiltonian: Theory, implementation and full device simulations 146
"Characterization of Polysilicon-Gate Depletion in MOS Structures" 145
Simulations and comparisons of basic analog and digital circuit blocks employing Tunnel FETs and conventional FinFETs 145
Two-Dimensional Heterojunction Interlayer Tunneling Field Effect Transistors (Thin-TFETs) 144
Pseudo-spectral methods for the efficient simulation of quantization effects in nanoscale MOS transistors 143
Models for the use of commercial TCAD in the analysis of silicon-based integrated biosensors 142
Surface roughness limited mobility in multi-gate FETs with arbitrary cross-section 142
A New Model for the Backscatter Coefficient in Nanoscale MOSFETs 142
A computational study of van der Waals tunnel transistors: fundamental aspects and design challenges 141
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs 141
"Hot-Carrier-Induced Alterations of MOSFET Capacitances: A Quantitative Monitor for Electrical Degradation" 141
Full-Band Quantization Analysis Reveals a Third Valley in Silicon Inversion Layers 140
On the origin of the mobility reduction in n- and p-metal-oxide-semiconductor field effect transistors with hafnium-based/metal gate stacks 140
Supersteep Retrograde Doping in Ferroelectric MOSFETs for sub-60mV/dec Subthreshold Swing 139
Simulation of nano-biosensors based on conventional TCAD 138
The impact of interface states on the mobility and the drive current of III-V MOSFETs 138
Revisiting piezoelectric FETs with sub-thermal swing 138
Experimental characterization of the vertical position of the trapped charge in Si nitride-based nonvolatile memory cells 137
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits 135
Quasi-Ballistic Gamma - and L-Valleys Transport in Ultrathin Body Strained (111) GaAs nMOSFETs 135
Performance analysis of different SRAM cell topologies employing tunnel-FETs 135
Modeling approaches for band-structure calculation in III-V FET quantum wells 134
Electron transport in 2D crystal semiconductors and their device applications 134
Piezoresistive Properties of Suspended Graphene Membranes under Uniaxial and Biaxial Strain in Nanoelectromechanical Pressure Sensors 134
Revised Analysis of Design Options and Minimum Subthreshold Swing in Piezoelectric FinFETs 134
Extraction of h parameter characterising ueff against Eeff curves in strained Si nMOS devices 133
Basic Insight about the Strain Engineering of n-type FinFETS 133
Experimental Characterization of Statistically Independent Defects in Gate Dielectrics - Part I: Description and Validation of the Model 133
Modeling of Field-Effect-Transistors with Strained and Alternative Channel Materials 133
An exact solution of the linearized Boltzmann transport equation and its application to mobility calculations in graphene bilayers 133
Impact of inelastic phonon scattering in the OFF state of Tunnel-field-effect transistors 133
A simulation based study of NC-FETs design: Off-state versus on-state perspective 133
Technology Computer Aided Design 132
DFT study of graphene doping due to metal contacts 131
Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs 130
On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors 130
Multi-scale strategy for high-k/metal-gate UTBB-FDSOI devices modeling with emphasis on back bias impact on mobility 130
Low-voltage high-performance III-V semiconductor MOSFETs for advanced CMOS nodes: impact of strain and interface traps 130
Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells 129
Device-circuit co-design and comparison of ultra-low voltage Tunnel-FET and CMOS digital circuits 129
Operation and Design of van der Waals Tunnel Transistors: A 3-D Quantum Transport Study 129
Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects 129
3D-FBK pixelsensors:Recent beam tests results with irradiated devices 128
Simulation of DC and RF Performance of the Graphene Base Transistor 128
Toward computationally efficient Multi-Subband Monte Carlo simulations of nanoscale MOSFETs 128
Improved understanding of metal–graphene contacts 128
Quantum simulation of a heterojunction inter-layer Tunnel FET based on 2-D gapped crystals 127
A new Statistical Model to extract the Stress Induced Oxide Trap number and the Probability Density Distribution of the Gate Current Produced by a Single Trap 127
Surface-Roughness-Induced Variability in Nanowire InAs Tunnel FETs 127
Theory of Motion at the band crossing points in bulk semiconductor crystals and in inversion layers 126
An improved procedure to extract the limiting carrier velocity in ultra scaled CMOS devices 126
Improved surface-roughness scattering and mobility models for multi-gate FETs with arbitrary cross-section and biasing scheme 126
Hot Hole Gate Current in Surface Channel p-MOSFETs 126
An MoS 2 -Based Piezoelectric FET: A Computational Study of Material Properties and Device Design 126
Ultra Thin SOI Transistors for Ultimate CMOS Technology: Fundamental Properties and Application Perspectives 125
Revised Stability Analysis of the Nonlinear Poisson Scheme in Self-Consistent Monte Carlo Device Simulations 125
Discrete Geometric Approach for Modelling Quantization Effects in Nanoscale Electron Devices 125
Multi-Subband Monte-Carlo study of Transport, Quantization and Electron Gas Degeneration in Ultra-Thin SOI n-MOSFETs 125
A new analytical model for the energy dispersion in two-dimensional hole inversion layers 125
Quantum simulation of a heterojunction vertical tunnel FET based on 2D transition metal dichalcogenides 125
On the experimental determination of channel back-scattering in nanoMOSFETs 124
Design and evaluation of mixed 3T-4T FinFET stacks for leakage reduction 124
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 124
Digital and analog TFET circuits: Design and benchmark 124
Inverters With Strained Si Nanowire Complementary Tunnel Field-Effect Transistors 123
Explanation of SILC probability density distributions with nonuniform generation of traps in the tunnel oxide of flash memory arrays 123
Impact of electron velocity on the ION of n-TFETs 123
Mobility Enhancement in Strained n-FinFETs: Basic Insight and Stress Engineering 123
Drain current improvements in uniaxially strained p-MOSFETs: A Multi-Subband Monte Carlo study 123
Totale 15.735
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Categoria #
all - tutte 124.153
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 124.153
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020765 0 0 0 0 0 0 0 0 0 0 245 520
2020/20214.489 125 528 286 583 241 533 261 435 591 199 481 226
2021/20222.779 159 229 102 147 41 179 208 122 39 497 645 411
2022/20232.920 362 293 53 402 217 745 9 205 356 38 102 138
2023/20241.155 146 78 77 29 141 112 70 91 134 63 29 185
2024/20256.274 1.478 605 377 151 203 390 500 434 695 633 808 0
Totale 35.962