IRIS
ESSENI, David
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
NA - Nord America 22.684
EU - Europa 5.200
AS - Asia 1.270
AF - Africa 24
Continente sconosciuto - Info sul continente non disponibili 14
SA - Sud America 4
OC - Oceania 1
Totale 29.197
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 22.567
UA - Ucraina 1.687
IT - Italia 1.134
DE - Germania 888
CN - Cina 834
FI - Finlandia 554
IE - Irlanda 334
SE - Svezia 257
TR - Turchia 168
SG - Singapore 122
CA - Canada 112
GB - Regno Unito 90
IN - India 61
FR - Francia 57
BE - Belgio 44
RU - Federazione Russa 32
VN - Vietnam 27
JP - Giappone 26
AT - Austria 25
CZ - Repubblica Ceca 17
TG - Togo 17
CH - Svizzera 16
EU - Europa 13
NL - Olanda 13
TW - Taiwan 11
GR - Grecia 8
KR - Corea 8
PL - Polonia 8
ES - Italia 6
BG - Bulgaria 5
RO - Romania 5
IR - Iran 4
MX - Messico 4
RS - Serbia 4
CL - Cile 3
HU - Ungheria 3
PH - Filippine 3
ZA - Sudafrica 3
BD - Bangladesh 2
DZ - Algeria 2
EE - Estonia 2
HK - Hong Kong 2
HR - Croazia 2
LI - Liechtenstein 2
MD - Moldavia 2
A2 - ???statistics.table.value.countryCode.A2??? 1
BN - Brunei Darussalam 1
CM - Camerun 1
CR - Costa Rica 1
DK - Danimarca 1
EG - Egitto 1
MK - Macedonia 1
NO - Norvegia 1
NZ - Nuova Zelanda 1
PE - Perù 1
PT - Portogallo 1
SK - Slovacchia (Repubblica Slovacca) 1
TH - Thailandia 1
Totale 29.197
Salva come PNG Salva come JPEG
Città #
Woodbridge 3.528
Fairfield 3.227
Houston 2.106
Ann Arbor 2.067
Ashburn 1.501
Seattle 1.275
Chandler 1.262
Wilmington 1.200
Jacksonville 1.133
Cambridge 1.075
Dearborn 706
Udine 508
Beijing 393
Princeton 326
Dublin 316
Izmir 165
San Diego 156
Singapore 115
Ottawa 90
Boardman 89
Ogden 87
Hefei 78
Des Moines 75
Norwalk 68
New York 61
Nanjing 58
Grafing 51
Milan 44
Trieste 43
Kunming 42
Brussels 41
Simi Valley 32
Helsinki 30
Redmond 29
Palaiseau 28
Dong Ket 27
Munich 25
Guangzhou 24
Codroipo 23
Indiana 23
Falls Church 22
Cervignano Del Friuli 21
Jinan 21
Bologna 20
Nanchang 19
Vienna 19
Rome 18
Arezzo 17
Lomé 17
Tokyo 17
Brno 16
Modena 14
Shenyang 14
Pesaro 13
Chengdu 12
Los Angeles 12
Pune 12
Toronto 12
Zhengzhou 12
Fuzhou 11
Shanghai 10
Wuhan 10
Parma 9
Redwood City 9
Changsha 8
Frankfurt am Main 8
Hebei 8
Montreal 8
San Mateo 8
Amsterdam 7
Andover 7
Chongqing 7
Hangzhou 7
Paris 7
Phoenix 7
Shaoxing 7
Zurich 7
Cork 6
Dallas 6
Hyderabad 6
Leawood 6
Nuremberg 6
Scafati 6
Taipei 6
Torre Del Greco 6
Treviso 6
Edinburgh 5
Lappeenranta 5
London 5
Ningbo 5
Quzhou 5
Saint Petersburg 5
Warsaw 5
Xian 5
Bangalore 4
Baotou 4
Castelfranco Veneto 4
Catania 4
Jiaxing 4
Mcallen 4
Totale 22.698
Salva come PNG Salva come JPEG
Nome #
Revised analysis of negative capacitance in ferroelectric-insulator capacitors: analytical and numerical results, physical insight, comparison to experiments 203
A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces 186
Design options for hetero-junction tunnel FETs with high on current and steep sub-threshold voltage slope 172
Improved surface roughness modeling and mobility projections in thin film MOSFETs 172
A New and Flexible Scheme for Hot-Electron Programming of Non-Volatile Memory Cells 168
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 163
Essential Physics of the OFF-State Current in Nanoscale MOSFETs and Tunnel FETs 163
Early assessment of tunnel-FET for energy-efficient logic circuits 160
A better understanding of the low-field mobility in Graphene Nano-ribbons 159
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits 156
Mixed Tunnel-FET/MOSFET Level Shifters: A New Proposal to Extend the Tunnel-FET Application Domain 155
Universal analytic model for tunnel FET circuit simulation 153
A review of selected topics in physics based modeling for tunnel field-effect transistors 152
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 151
An Experimental Study of Low Field Electron Mobility in Double-Gate, Ultra-Thin SOI MOSFETs 150
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits 145
Failure of the Scalar Dielectric Function Approach for the Screening Modeling in Double-Gate SOI MOSFETs and in FinFETs 144
A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors 143
Drain Current Improvements in Uniaxially Strained p-MOSFETs: a Multi-Subband Monte Carlo Study 140
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 140
Influence of interface traps on ferroelectric NC-FETs 140
Electromechanical Piezoresistive Sensing in Suspended Graphene Membranes 138
Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel 138
Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells 138
Simulation analysis of III-V n-MOSFETs: channel materials, Fermi level pinning and biaxial strain 138
Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits 137
New design perspective for Ferroelectric NC-FETs 135
Two-Dimensional Heterojunction Interlayer Tunneling Field Effect Transistors (Thin-TFETs) 134
"A Novel Method to Characterize Parasitic Capacitances in MOSFET's" 133
NEGF based transport modelling with a full-band, pseudopotential Hamiltonian: Theory, implementation and full device simulations 133
Simulations and comparisons of basic analog and digital circuit blocks employing Tunnel FETs and conventional FinFETs 133
Surface roughness limited mobility in multi-gate FETs with arbitrary cross-section 131
Pseudo-spectral methods for the efficient simulation of quantization effects in nanoscale MOS transistors 130
Revisiting piezoelectric FETs with sub-thermal swing 130
Full-Band Quantization Analysis Reveals a Third Valley in Silicon Inversion Layers 129
A New Model for the Backscatter Coefficient in Nanoscale MOSFETs 129
Models for the use of commercial TCAD in the analysis of silicon-based integrated biosensors 128
Electron transport in 2D crystal semiconductors and their device applications 127
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs 127
"Hot-Carrier-Induced Alterations of MOSFET Capacitances: A Quantitative Monitor for Electrical Degradation" 127
"Characterization of Polysilicon-Gate Depletion in MOS Structures" 125
Simulation of nano-biosensors based on conventional TCAD 125
Experimental characterization of the vertical position of the trapped charge in Si nitride-based nonvolatile memory cells 125
A computational study of van der Waals tunnel transistors: fundamental aspects and design challenges 125
Piezoresistive Properties of Suspended Graphene Membranes under Uniaxial and Biaxial Strain in Nanoelectromechanical Pressure Sensors 125
On the origin of the mobility reduction in n- and p-metal-oxide-semiconductor field effect transistors with hafnium-based/metal gate stacks 125
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 125
The impact of interface states on the mobility and the drive current of III-V MOSFETs 124
Revised Analysis of Design Options and Minimum Subthreshold Swing in Piezoelectric FinFETs 124
Performance analysis of different SRAM cell topologies employing tunnel-FETs 124
Modeling approaches for band-structure calculation in III-V FET quantum wells 123
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits 123
Supersteep Retrograde Doping in Ferroelectric MOSFETs for sub-60mV/dec Subthreshold Swing 123
Experimental Characterization of Statistically Independent Defects in Gate Dielectrics - Part I: Description and Validation of the Model 123
Impact of inelastic phonon scattering in the OFF state of Tunnel-field-effect transistors 123
Multi-scale strategy for high-k/metal-gate UTBB-FDSOI devices modeling with emphasis on back bias impact on mobility 122
Device-circuit co-design and comparison of ultra-low voltage Tunnel-FET and CMOS digital circuits 121
Quasi-Ballistic Gamma - and L-Valleys Transport in Ultrathin Body Strained (111) GaAs nMOSFETs 121
Quantum simulation of a heterojunction inter-layer Tunnel FET based on 2-D gapped crystals 120
Technology Computer Aided Design 120
An exact solution of the linearized Boltzmann transport equation and its application to mobility calculations in graphene bilayers 120
Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects 120
Basic Insight about the Strain Engineering of n-type FinFETS 119
Modeling of Field-Effect-Transistors with Strained and Alternative Channel Materials 119
Stabilization of negative capacitance in ferroelectric capacitors with and without a metal interlayer 119
Extraction of h parameter characterising ueff against Eeff curves in strained Si nMOS devices 118
Operation and Design of van der Waals Tunnel Transistors: A 3-D Quantum Transport Study 118
Improved surface-roughness scattering and mobility models for multi-gate FETs with arbitrary cross-section and biasing scheme 117
Low-voltage high-performance III-V semiconductor MOSFETs for advanced CMOS nodes: impact of strain and interface traps 117
Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells 116
Multi-Subband Monte-Carlo study of Transport, Quantization and Electron Gas Degeneration in Ultra-Thin SOI n-MOSFETs 116
Simulation of DC and RF Performance of the Graphene Base Transistor 116
On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors 116
An MoS 2 -Based Piezoelectric FET: A Computational Study of Material Properties and Device Design 116
Revised Stability Analysis of the Nonlinear Poisson Scheme in Self-Consistent Monte Carlo Device Simulations 115
Hot Hole Gate Current in Surface Channel p-MOSFETs 115
Toward computationally efficient Multi-Subband Monte Carlo simulations of nanoscale MOSFETs 114
DFT study of graphene doping due to metal contacts 114
A simulation based study of NC-FETs design: Off-state versus on-state perspective 114
Surface-Roughness-Induced Variability in Nanowire InAs Tunnel FETs 113
Inverters With Strained Si Nanowire Complementary Tunnel Field-Effect Transistors 113
Impact of electron velocity on the ION of n-TFETs 113
Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs 113
Continuous Semiempirical Model for the CurrentVoltage Characteristics of Tunnel FETs 113
Digital and analog TFET circuits: Design and benchmark 113
Quantum simulation of a heterojunction vertical tunnel FET based on 2D transition metal dichalcogenides 112
On the experimental determination of channel back-scattering in nanoMOSFETs 111
A new Statistical Model to extract the Stress Induced Oxide Trap number and the Probability Density Distribution of the Gate Current Produced by a Single Trap 111
Discrete Geometric Approach for Modelling Quantization Effects in Nanoscale Electron Devices 111
An improved procedure to extract the limiting carrier velocity in ultra scaled CMOS devices 111
Improved understanding of metal–graphene contacts 111
Ultra Thin SOI Transistors for Ultimate CMOS Technology: Fundamental Properties and Application Perspectives 110
Transport models based on NEGF and empirical pseudopotentials: A computationally viable method for self-consistent simulation of nanoscale devices 110
A Quantitative Error Analysis of the Mobility Extraction According to the Matthiessen Rule in Advanced MOS Transistors 109
A new analytical model for the energy dispersion in two-dimensional hole inversion layers 109
Modeling and Simulation Approaches for Drain Current Computation 108
Drain current improvements in uniaxially strained p-MOSFETs: A Multi-Subband Monte Carlo study 108
Explanation of SILC probability density distributions with nonuniform generation of traps in the tunnel oxide of flash memory arrays 107
Mobility Enhancement in Strained n-FinFETs: Basic Insight and Stress Engineering 107
Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating 107
Totale 12.835
Salva come PNG Salva come JPEG
Categoria #
all - tutte 88.810
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 88.810
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20208.870 502 430 328 1.344 674 1.297 1.008 1.032 808 682 245 520
2020/20214.489 125 528 286 583 241 533 261 435 591 199 481 226
2021/20222.779 159 229 102 147 41 179 208 122 39 497 645 411
2022/20232.920 362 293 53 402 217 745 9 205 356 38 102 138
2023/20241.155 146 78 77 29 141 112 70 91 134 63 29 185
2024/202547 47 0 0 0 0 0 0 0 0 0 0 0
Totale 29.735