IRIS
ESSENI, David
 Distribuzione geografica
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Continente #
NA - Nord America 28.436
AS - Asia 10.225
EU - Europa 7.488
SA - Sud America 1.905
AF - Africa 270
Continente sconosciuto - Info sul continente non disponibili 19
OC - Oceania 6
AN - Antartide 1
Totale 48.350
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Nazione #
US - Stati Uniti d'America 28.098
SG - Singapore 4.948
CN - Cina 2.108
UA - Ucraina 1.720
BR - Brasile 1.495
IT - Italia 1.446
DE - Germania 1.209
HK - Hong Kong 1.015
VN - Vietnam 825
FI - Finlandia 660
RU - Federazione Russa 579
FR - Francia 487
IE - Irlanda 351
SE - Svezia 292
IN - India 255
TR - Turchia 229
GB - Regno Unito 220
CA - Canada 192
AR - Argentina 145
BD - Bangladesh 131
KR - Corea 114
NL - Olanda 91
MX - Messico 90
AT - Austria 89
IQ - Iraq 89
ZA - Sudafrica 82
JP - Giappone 79
EC - Ecuador 65
PL - Polonia 63
ID - Indonesia 56
CO - Colombia 53
PK - Pakistan 53
BE - Belgio 50
ES - Italia 49
MA - Marocco 41
PH - Filippine 41
VE - Venezuela 41
SA - Arabia Saudita 38
CL - Cile 34
CH - Svizzera 33
UZ - Uzbekistan 31
TN - Tunisia 27
PY - Paraguay 26
TW - Taiwan 26
JO - Giordania 23
KE - Kenya 23
LT - Lituania 22
CZ - Repubblica Ceca 21
BO - Bolivia 19
TG - Togo 19
MY - Malesia 18
DO - Repubblica Dominicana 14
DZ - Algeria 14
EG - Egitto 14
GR - Grecia 14
AZ - Azerbaigian 13
EU - Europa 13
UY - Uruguay 13
AE - Emirati Arabi Uniti 12
PE - Perù 12
IL - Israele 11
OM - Oman 11
BG - Bulgaria 10
KZ - Kazakistan 10
RO - Romania 10
CI - Costa d'Avorio 9
CR - Costa Rica 9
PS - Palestinian Territory 9
RS - Serbia 9
AL - Albania 8
IR - Iran 8
MD - Moldavia 8
NP - Nepal 8
TH - Thailandia 8
AO - Angola 7
DK - Danimarca 7
GE - Georgia 7
JM - Giamaica 7
PA - Panama 7
AM - Armenia 6
HU - Ungheria 6
KG - Kirghizistan 6
LB - Libano 6
BH - Bahrain 5
HR - Croazia 5
LV - Lettonia 5
PT - Portogallo 5
SN - Senegal 5
TT - Trinidad e Tobago 5
XK - ???statistics.table.value.countryCode.XK??? 5
ET - Etiopia 4
HN - Honduras 4
LK - Sri Lanka 4
NI - Nicaragua 4
NO - Norvegia 4
SK - Slovacchia (Repubblica Slovacca) 4
SY - Repubblica araba siriana 4
BN - Brunei Darussalam 3
CG - Congo 3
EE - Estonia 3
Totale 48.289
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Città #
Woodbridge 3.528
Fairfield 3.227
Ashburn 2.139
Houston 2.127
Ann Arbor 2.067
Singapore 1.902
Seattle 1.290
Chandler 1.259
Wilmington 1.200
Jacksonville 1.135
Cambridge 1.077
Beijing 1.024
Hong Kong 1.004
Dearborn 706
Udine 549
San Jose 511
Boardman 442
Dublin 330
Princeton 326
Lauterbourg 322
Los Angeles 291
Ho Chi Minh City 245
Buffalo 203
Munich 196
Dallas 182
Hanoi 178
Izmir 170
Hefei 166
San Diego 157
New York 143
São Paulo 133
Helsinki 109
Redondo Beach 109
Santa Clara 103
Seoul 98
The Dalles 95
Ottawa 91
Ogden 86
Des Moines 79
Milan 72
Norwalk 68
Orem 66
Tokyo 64
East Aurora 61
Nanjing 61
Frankfurt am Main 59
Vienna 52
Warsaw 52
Düsseldorf 51
Grafing 51
Rio de Janeiro 49
Atlanta 48
Brussels 46
Trieste 46
Amsterdam 44
Mumbai 44
Kunming 43
Chennai 41
Johannesburg 41
Nuremberg 40
Bologna 38
Da Nang 38
Montreal 37
Haiphong 36
Brooklyn 35
Council Bluffs 35
Stockholm 35
Guangzhou 33
Modena 32
Simi Valley 32
Chicago 31
Belo Horizonte 30
Denver 30
Poplar 29
Redmond 29
Boston 28
London 28
Palaiseau 28
Phoenix 28
Baghdad 27
Brasília 27
Dhaka 27
Dong Ket 27
San Francisco 26
Toronto 26
Shanghai 25
Tashkent 24
Codroipo 23
Indiana 23
Mexico City 23
San Michele al Tagliamento 23
Falls Church 22
Guayaquil 22
Nairobi 22
Biên Hòa 21
Cervignano Del Friuli 21
Jinan 21
Rome 21
Salvador 21
Campinas 20
Totale 31.202
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Nome #
Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells 1.666
A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces 261
Revised analysis of negative capacitance in ferroelectric-insulator capacitors: analytical and numerical results, physical insight, comparison to experiments 251
Improved surface roughness modeling and mobility projections in thin film MOSFETs 234
Stabilization of negative capacitance in ferroelectric capacitors with and without a metal interlayer 232
A better understanding of the low-field mobility in Graphene Nano-ribbons 224
A New and Flexible Scheme for Hot-Electron Programming of Non-Volatile Memory Cells 222
A review of selected topics in physics based modeling for tunnel field-effect transistors 220
Essential Physics of the OFF-State Current in Nanoscale MOSFETs and Tunnel FETs 215
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits 213
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 211
Scaled vertical-nanowire heterojunction tunnelling transistors with extreme quantum confinement 206
Design options for hetero-junction tunnel FETs with high on current and steep sub-threshold voltage slope 206
Mixed Tunnel-FET/MOSFET Level Shifters: A New Proposal to Extend the Tunnel-FET Application Domain 205
A computational study of van der Waals tunnel transistors: fundamental aspects and design challenges 205
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 200
A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors 199
An Experimental Study of Low Field Electron Mobility in Double-Gate, Ultra-Thin SOI MOSFETs 198
Early assessment of tunnel-FET for energy-efficient logic circuits 196
Drain Current Improvements in Uniaxially Strained p-MOSFETs: a Multi-Subband Monte Carlo Study 193
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 193
Failure of the Scalar Dielectric Function Approach for the Screening Modeling in Double-Gate SOI MOSFETs and in FinFETs 193
Electromechanical Piezoresistive Sensing in Suspended Graphene Membranes 192
3D-FBK pixelsensors:Recent beam tests results with irradiated devices 191
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 191
A New Model for the Backscatter Coefficient in Nanoscale MOSFETs 190
Basic Insight about the Strain Engineering of n-type FinFETS 189
New design perspective for Ferroelectric NC-FETs 189
Universal analytic model for tunnel FET circuit simulation 187
Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel 186
Comparison between Pseudospectral and Discrete Geometric Methods for Modelling Quantization Effects in Nanoscale Electron Devices 186
DFT study of graphene doping due to metal contacts 186
Influence of interface traps on ferroelectric NC-FETs 185
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs 185
Simulation analysis of III-V n-MOSFETs: channel materials, Fermi level pinning and biaxial strain 185
"Characterization of Polysilicon-Gate Depletion in MOS Structures" 184
Models for the use of commercial TCAD in the analysis of silicon-based integrated biosensors 184
Experimental characterization of the vertical position of the trapped charge in Si nitride-based nonvolatile memory cells 183
Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits 183
"Hot-Carrier-Induced Alterations of MOSFET Capacitances: A Quantitative Monitor for Electrical Degradation" 183
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits 183
Surface roughness limited mobility in multi-gate FETs with arbitrary cross-section 181
Revisiting piezoelectric FETs with sub-thermal swing 181
NEGF based transport modelling with a full-band, pseudopotential Hamiltonian: Theory, implementation and full device simulations 181
Full-Band Quantization Analysis Reveals a Third Valley in Silicon Inversion Layers 180
On the origin of the mobility reduction in n- and p-metal-oxide-semiconductor field effect transistors with hafnium-based/metal gate stacks 180
"A Novel Method to Characterize Parasitic Capacitances in MOSFET's" 179
Discrete Geometric Approach for Modelling Quantization Effects in Nanoscale Electron Devices 179
An improved procedure to extract the limiting carrier velocity in ultra scaled CMOS devices 179
An exact solution of the linearized Boltzmann transport equation and its application to mobility calculations in graphene bilayers 179
Pseudo-spectral methods for the efficient simulation of quantization effects in nanoscale MOS transistors 177
Simulations and comparisons of basic analog and digital circuit blocks employing Tunnel FETs and conventional FinFETs 177
Multi-Subband Monte-Carlo study of Transport, Quantization and Electron Gas Degeneration in Ultra-Thin SOI n-MOSFETs 176
Two-Dimensional Heterojunction Interlayer Tunneling Field Effect Transistors (Thin-TFETs) 176
Simulation of nano-biosensors based on conventional TCAD 175
A Quantitative Error Analysis of the Mobility Extraction According to the Matthiessen Rule in Advanced MOS Transistors 174
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 173
Piezoresistive Properties of Suspended Graphene Membranes under Uniaxial and Biaxial Strain in Nanoelectromechanical Pressure Sensors 173
Mobility Enhancement in Strained n-FinFETs: Basic Insight and Stress Engineering 173
"A Better Understanding of Substrate Enhanced Gate Current in VLSI MOSFET's and Flash Cells - Part II: Physical Analysis 171
Supersteep Retrograde Doping in Ferroelectric MOSFETs for sub-60mV/dec Subthreshold Swing 171
On the Surface-Roughness Scattering in Biaxially Strained n- and p-MOS Transistors 170
On the experimental determination of channel back-scattering in nanoMOSFETs 170
On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors 170
Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects 170
The impact of interface states on the mobility and the drive current of III-V MOSFETs 169
Surface-Roughness-Induced Variability in Nanowire InAs Tunnel FETs 168
Comparison of Semiclassical Transport Formulations Including Quantum Corrections for Advanced Devices with High-K Gate Stacks 168
Modeling of Field-Effect-Transistors with Strained and Alternative Channel Materials 167
Toward computationally efficient Multi-Subband Monte Carlo simulations of nanoscale MOSFETs 166
Revised Analysis of Design Options and Minimum Subthreshold Swing in Piezoelectric FinFETs 166
Improved understanding of metal–graphene contacts 166
Extraction of h parameter characterising ueff against Eeff curves in strained Si nMOS devices 165
A new analytical model for the energy dispersion in two-dimensional hole inversion layers 165
Simulation of DC and RF Performance of the Graphene Base Transistor 165
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits 165
Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells 164
Quasi-Ballistic Gamma - and L-Valleys Transport in Ultrathin Body Strained (111) GaAs nMOSFETs 164
Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating 164
Low-voltage high-performance III-V semiconductor MOSFETs for advanced CMOS nodes: impact of strain and interface traps 164
Device-circuit co-design and comparison of ultra-low voltage Tunnel-FET and CMOS digital circuits 163
A simulation study of strain induced performance enhancements in InAs nanowire Tunnel-FETs 162
Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs 162
Improved surface-roughness scattering and mobility models for multi-gate FETs with arbitrary cross-section and biasing scheme 162
Multi-scale strategy for high-k/metal-gate UTBB-FDSOI devices modeling with emphasis on back bias impact on mobility 162
Drain current improvements in uniaxially strained p-MOSFETs: A Multi-Subband Monte Carlo study 162
Technology Computer Aided Design 161
Modeling approaches for band-structure calculation in III-V FET quantum wells 161
Performance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications 161
Performance analysis of different SRAM cell topologies employing tunnel-FETs 161
Modeling and Simulation Approaches for Drain Current Computation 160
Explanation of SILC probability density distributions with nonuniform generation of traps in the tunnel oxide of flash memory arrays 160
Semi-classical transport modelling of CMOS transistors with arbitrary crystal orientations and strain engineering 158
Theory of Motion at the band crossing points in bulk semiconductor crystals and in inversion layers 158
A new Statistical Model to extract the Stress Induced Oxide Trap number and the Probability Density Distribution of the Gate Current Produced by a Single Trap 157
Revised Stability Analysis of the Nonlinear Poisson Scheme in Self-Consistent Monte Carlo Device Simulations 157
Characterization and Modeling of long term retention in SONOS Non Volatile Memories 157
Experimental Characterization of Statistically Independent Defects in Gate Dielectrics - Part I: Description and Validation of the Model 157
Inverters With Strained Si Nanowire Complementary Tunnel Field-Effect Transistors 156
A simulation based study of NC-FETs design: Off-state versus on-state perspective 156
Totale 19.579
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Categoria #
all - tutte 164.744
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 164.744
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021906 0 0 0 0 0 0 0 0 0 199 481 226
2021/20222.779 159 229 102 147 41 179 208 122 39 497 645 411
2022/20232.915 362 291 53 401 217 744 9 205 356 38 102 137
2023/20241.141 143 78 77 29 140 107 70 91 133 60 29 184
2024/20258.183 1.477 604 375 149 202 389 498 433 694 632 915 1.815
2025/202611.139 840 1.396 1.135 1.390 2.061 923 1.372 387 860 775 0 0
Totale 48.991