IRIS
ESSENI, David
 Distribuzione geografica
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Continente #
NA - Nord America 27.188
AS - Asia 8.676
EU - Europa 6.916
SA - Sud America 1.653
AF - Africa 185
Continente sconosciuto - Info sul continente non disponibili 19
OC - Oceania 5
AN - Antartide 1
Totale 44.643
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Nazione #
US - Stati Uniti d'America 26.892
SG - Singapore 4.312
CN - Cina 1.890
UA - Ucraina 1.710
IT - Italia 1.386
BR - Brasile 1.372
DE - Germania 1.178
HK - Hong Kong 963
FI - Finlandia 632
VN - Vietnam 619
RU - Federazione Russa 568
IE - Irlanda 349
SE - Svezia 289
TR - Turchia 202
GB - Regno Unito 200
CA - Canada 182
IN - India 158
FR - Francia 142
KR - Corea 109
AR - Argentina 103
AT - Austria 84
BD - Bangladesh 73
NL - Olanda 73
MX - Messico 71
JP - Giappone 63
PL - Polonia 60
ZA - Sudafrica 57
EC - Ecuador 51
BE - Belgio 47
IQ - Iraq 42
ES - Italia 34
ID - Indonesia 31
CH - Svizzera 30
CO - Colombia 28
MA - Marocco 27
PK - Pakistan 26
CL - Cile 24
PY - Paraguay 23
CZ - Repubblica Ceca 21
TW - Taiwan 21
VE - Venezuela 20
LT - Lituania 19
KE - Kenya 18
TG - Togo 18
UZ - Uzbekistan 18
TN - Tunisia 14
EU - Europa 13
GR - Grecia 13
AE - Emirati Arabi Uniti 12
JO - Giordania 12
PE - Perù 12
PH - Filippine 12
AZ - Azerbaigian 11
DO - Repubblica Dominicana 11
UY - Uruguay 11
BG - Bulgaria 10
EG - Egitto 10
RO - Romania 10
SA - Arabia Saudita 10
BO - Bolivia 8
CI - Costa d'Avorio 8
DZ - Algeria 8
IL - Israele 8
IR - Iran 8
CR - Costa Rica 7
GE - Georgia 7
KZ - Kazakistan 7
AL - Albania 6
AM - Armenia 6
DK - Danimarca 6
KG - Kirghizistan 6
MD - Moldavia 6
MY - Malesia 6
NP - Nepal 6
OM - Oman 6
PA - Panama 6
PS - Palestinian Territory 6
RS - Serbia 6
HR - Croazia 5
HU - Ungheria 5
JM - Giamaica 5
TT - Trinidad e Tobago 5
XK - ???statistics.table.value.countryCode.XK??? 5
AO - Angola 4
HN - Honduras 4
LB - Libano 4
LV - Lettonia 4
NO - Norvegia 4
PT - Portogallo 4
SK - Slovacchia (Repubblica Slovacca) 4
SN - Senegal 4
BH - Bahrain 3
BN - Brunei Darussalam 3
EE - Estonia 3
ET - Etiopia 3
LK - Sri Lanka 3
MK - Macedonia 3
NZ - Nuova Zelanda 3
BW - Botswana 2
CY - Cipro 2
Totale 44.605
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Città #
Woodbridge 3.528
Fairfield 3.227
Houston 2.127
Ann Arbor 2.067
Ashburn 1.928
Singapore 1.641
Seattle 1.289
Chandler 1.262
Wilmington 1.200
Jacksonville 1.134
Cambridge 1.077
Beijing 995
Hong Kong 958
Dearborn 706
Udine 548
Boardman 442
Dublin 329
Princeton 326
Los Angeles 268
Ho Chi Minh City 203
Buffalo 196
Munich 196
Dallas 176
Hefei 166
Izmir 166
San Diego 157
New York 139
Hanoi 131
São Paulo 121
Redondo Beach 110
Seoul 98
Ottawa 91
Ogden 87
Helsinki 80
Des Moines 77
Santa Clara 77
Norwalk 68
Milan 67
East Aurora 61
Nanjing 60
Tokyo 52
Düsseldorf 51
Grafing 51
Warsaw 49
Vienna 48
Rio de Janeiro 47
Trieste 46
Brussels 44
Kunming 43
Frankfurt am Main 37
Montreal 36
Mumbai 36
Amsterdam 35
Brooklyn 34
Nuremberg 34
Stockholm 33
Johannesburg 32
Modena 32
Simi Valley 32
Bologna 31
Guangzhou 31
Atlanta 29
Orem 29
Redmond 29
Boston 28
Chennai 28
Haiphong 28
Palaiseau 28
Poplar 28
Belo Horizonte 27
Denver 27
Dong Ket 27
Phoenix 27
Brasília 25
Chicago 24
London 24
San Francisco 24
Codroipo 23
Indiana 23
San Michele al Tagliamento 23
The Dalles 23
Toronto 23
Falls Church 22
Mexico City 22
Shanghai 22
Cervignano Del Friuli 21
Jinan 21
Rome 21
Campinas 20
Da Nang 20
Lappeenranta 19
Nanchang 19
Salvador 19
Arezzo 18
Biên Hòa 18
Curitiba 18
Dhaka 18
Hải Dương 18
Lomé 18
Belluno 17
Totale 29.311
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Nome #
Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells 1.656
Revised analysis of negative capacitance in ferroelectric-insulator capacitors: analytical and numerical results, physical insight, comparison to experiments 238
A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces 230
Improved surface roughness modeling and mobility projections in thin film MOSFETs 223
A New and Flexible Scheme for Hot-Electron Programming of Non-Volatile Memory Cells 210
A better understanding of the low-field mobility in Graphene Nano-ribbons 208
Stabilization of negative capacitance in ferroelectric capacitors with and without a metal interlayer 208
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits 205
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 204
Essential Physics of the OFF-State Current in Nanoscale MOSFETs and Tunnel FETs 204
A review of selected topics in physics based modeling for tunnel field-effect transistors 202
Design options for hetero-junction tunnel FETs with high on current and steep sub-threshold voltage slope 201
Scaled vertical-nanowire heterojunction tunnelling transistors with extreme quantum confinement 195
An Experimental Study of Low Field Electron Mobility in Double-Gate, Ultra-Thin SOI MOSFETs 192
A computational study of van der Waals tunnel transistors: fundamental aspects and design challenges 189
Mixed Tunnel-FET/MOSFET Level Shifters: A New Proposal to Extend the Tunnel-FET Application Domain 188
Early assessment of tunnel-FET for energy-efficient logic circuits 188
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 185
A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors 184
Drain Current Improvements in Uniaxially Strained p-MOSFETs: a Multi-Subband Monte Carlo Study 183
Electromechanical Piezoresistive Sensing in Suspended Graphene Membranes 182
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 182
Basic Insight about the Strain Engineering of n-type FinFETS 180
A New Model for the Backscatter Coefficient in Nanoscale MOSFETs 180
Failure of the Scalar Dielectric Function Approach for the Screening Modeling in Double-Gate SOI MOSFETs and in FinFETs 180
Influence of interface traps on ferroelectric NC-FETs 179
Universal analytic model for tunnel FET circuit simulation 178
Simulation analysis of III-V n-MOSFETs: channel materials, Fermi level pinning and biaxial strain 178
Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel 177
New design perspective for Ferroelectric NC-FETs 177
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 177
3D-FBK pixelsensors:Recent beam tests results with irradiated devices 176
"A Novel Method to Characterize Parasitic Capacitances in MOSFET's" 175
"Characterization of Polysilicon-Gate Depletion in MOS Structures" 175
Comparison between Pseudospectral and Discrete Geometric Methods for Modelling Quantization Effects in Nanoscale Electron Devices 175
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs 174
Models for the use of commercial TCAD in the analysis of silicon-based integrated biosensors 173
Full-Band Quantization Analysis Reveals a Third Valley in Silicon Inversion Layers 172
"Hot-Carrier-Induced Alterations of MOSFET Capacitances: A Quantitative Monitor for Electrical Degradation" 172
Discrete Geometric Approach for Modelling Quantization Effects in Nanoscale Electron Devices 171
NEGF based transport modelling with a full-band, pseudopotential Hamiltonian: Theory, implementation and full device simulations 171
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits 171
An improved procedure to extract the limiting carrier velocity in ultra scaled CMOS devices 170
Surface roughness limited mobility in multi-gate FETs with arbitrary cross-section 170
Revisiting piezoelectric FETs with sub-thermal swing 170
Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits 168
On the origin of the mobility reduction in n- and p-metal-oxide-semiconductor field effect transistors with hafnium-based/metal gate stacks 168
An exact solution of the linearized Boltzmann transport equation and its application to mobility calculations in graphene bilayers 167
Pseudo-spectral methods for the efficient simulation of quantization effects in nanoscale MOS transistors 166
Experimental characterization of the vertical position of the trapped charge in Si nitride-based nonvolatile memory cells 166
DFT study of graphene doping due to metal contacts 165
On the experimental determination of channel back-scattering in nanoMOSFETs 163
Supersteep Retrograde Doping in Ferroelectric MOSFETs for sub-60mV/dec Subthreshold Swing 162
Simulations and comparisons of basic analog and digital circuit blocks employing Tunnel FETs and conventional FinFETs 162
Multi-Subband Monte-Carlo study of Transport, Quantization and Electron Gas Degeneration in Ultra-Thin SOI n-MOSFETs 161
On the Surface-Roughness Scattering in Biaxially Strained n- and p-MOS Transistors 160
A Quantitative Error Analysis of the Mobility Extraction According to the Matthiessen Rule in Advanced MOS Transistors 160
Two-Dimensional Heterojunction Interlayer Tunneling Field Effect Transistors (Thin-TFETs) 160
Device-circuit co-design and comparison of ultra-low voltage Tunnel-FET and CMOS digital circuits 159
The impact of interface states on the mobility and the drive current of III-V MOSFETs 159
Comparison of Semiclassical Transport Formulations Including Quantum Corrections for Advanced Devices with High-K Gate Stacks 159
Extraction of h parameter characterising ueff against Eeff curves in strained Si nMOS devices 158
Simulation of nano-biosensors based on conventional TCAD 158
Piezoresistive Properties of Suspended Graphene Membranes under Uniaxial and Biaxial Strain in Nanoelectromechanical Pressure Sensors 158
Mobility Enhancement in Strained n-FinFETs: Basic Insight and Stress Engineering 158
"A Better Understanding of Substrate Enhanced Gate Current in VLSI MOSFET's and Flash Cells - Part II: Physical Analysis 157
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 157
On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors 157
Surface-Roughness-Induced Variability in Nanowire InAs Tunnel FETs 156
Quasi-Ballistic Gamma - and L-Valleys Transport in Ultrathin Body Strained (111) GaAs nMOSFETs 156
Revised Analysis of Design Options and Minimum Subthreshold Swing in Piezoelectric FinFETs 156
Drain current improvements in uniaxially strained p-MOSFETs: A Multi-Subband Monte Carlo study 156
Modeling of Field-Effect-Transistors with Strained and Alternative Channel Materials 155
Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects 155
Simulation of DC and RF Performance of the Graphene Base Transistor 154
Modeling approaches for band-structure calculation in III-V FET quantum wells 154
Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs 153
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits 153
Improved understanding of metal–graphene contacts 153
Modeling and Simulation Approaches for Drain Current Computation 152
Technology Computer Aided Design 152
Toward computationally efficient Multi-Subband Monte Carlo simulations of nanoscale MOSFETs 152
Low-voltage high-performance III-V semiconductor MOSFETs for advanced CMOS nodes: impact of strain and interface traps 152
Theory of Motion at the band crossing points in bulk semiconductor crystals and in inversion layers 150
A new analytical model for the energy dispersion in two-dimensional hole inversion layers 150
Experimental Characterization of Statistically Independent Defects in Gate Dielectrics - Part I: Description and Validation of the Model 150
Explanation of SILC probability density distributions with nonuniform generation of traps in the tunnel oxide of flash memory arrays 149
A simulation study of strain induced performance enhancements in InAs nanowire Tunnel-FETs 149
Operation and Design of van der Waals Tunnel Transistors: A 3-D Quantum Transport Study 149
Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating 149
Performance analysis of different SRAM cell topologies employing tunnel-FETs 149
A new Statistical Model to extract the Stress Induced Oxide Trap number and the Probability Density Distribution of the Gate Current Produced by a Single Trap 148
Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells 148
Impact of electron velocity on the ION of n-TFETs 148
Improved surface-roughness scattering and mobility models for multi-gate FETs with arbitrary cross-section and biasing scheme 148
Design and evaluation of mixed 3T-4T FinFET stacks for leakage reduction 147
Revised Stability Analysis of the Nonlinear Poisson Scheme in Self-Consistent Monte Carlo Device Simulations 147
Characterization and Modeling of long term retention in SONOS Non Volatile Memories 147
Continuous Semiempirical Model for the CurrentVoltage Characteristics of Tunnel FETs 147
Drain Current Computation in Nanoscale nMOSFETs: Comparison of Transport Models 147
Totale 18.417
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Categoria #
all - tutte 158.134
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 158.134
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20212.726 0 0 0 0 0 533 261 435 591 199 481 226
2021/20222.779 159 229 102 147 41 179 208 122 39 497 645 411
2022/20232.920 362 293 53 402 217 745 9 205 356 38 102 138
2023/20241.155 146 78 77 29 141 112 70 91 134 63 29 185
2024/20258.207 1.478 605 377 151 203 390 500 434 695 633 920 1.821
2025/20267.374 848 1.402 1.137 1.391 2.068 528 0 0 0 0 0 0
Totale 45.269